(100) MgAl2O4 as a lattice-matched substrate for the epitaxial thin film deposition of the relaxor ferroelectric PMN-PT

Keogh, Declan; Chen, Zhuoying; Hughes, Robert A.; Dąbkowski, A.; Marinov, O.; Maunders, Christian; Gunawan, Lina; Deen, M. Jamal; Preston, J. S.; Botton, Gianluigi A.

doi:10.1007/s00339-009-5372-2

Cited by 9 publications

(3 citation statements)

References 50 publications

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“…25,26) PMN-PT thin films have been reported to show a very low dielectric constant below 3000, if compared with those of single crystals. [25][26][27] However, further investigation is essential to clarify the reason behind this difference.…”

Section: Dielectric Propertymentioning

confidence: 99%

Effects of Oxide Seeding Layers on Electrical Properties of Chemical Solution Deposition-Derived Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ Relaxor Thin Films

Arai

Goto

Yanagida

et al. 2013

Jpn. J. Appl. Phys.

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Relaxor ferroelectrics Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) have attracted considerable attention because of their excellent electrical properties, such as high dielectricity and piezoelectricity, for application to super capacitors, piezoelectric actuators, and so on. It is well known that the electrical properties of ferroelectric thin films depend on several parameters, such as crystal orientation, composition, and residual stress. In this study, the effects of the lead titanate and lanthanum nickel oxide seeding layers on the film orientation, electrical properties, and low-temperature crystallization behavior were investigated for Chemical Solution Deposition (CSD)-derived PMN–PT thin films. As a result, PMN–PT thin films with (001)C- and (111)C-preferred orientations were successfully obtained by designing the seeding layers. Both thin films exhibited very good ferroelectricity because of their good crystallinity and preferred orientation.

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Section: Dielectric Propertymentioning

confidence: 99%

Effects of Oxide Seeding Layers on Electrical Properties of Chemical Solution Deposition-Derived Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ Relaxor Thin Films

Arai

Goto

Yanagida

et al. 2013

Jpn. J. Appl. Phys.

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13] Ferroelectric materials (1 À x)PbMg 1=3 Nb 2=3 O 3 À xPbTiO 3 with the compositions near the morphotropic phase boundary are promising for microelectro-mechanical systems and high-strain actuators/transducers due to their well-known ferroelectric, dielectric, and piezoelectric properties. [14][15][16][17][18][19][20] The electrocaloric effect (ECE) of (111) 0.65PbMg 1=3 -Nb 2=3 O 3 À 0:35PbTiO 3 (PMN-PT 65/35) thin films near the Curie point has been studied. 21 This study reported an electrocaloric temperature change ÁT of 31 K (ÁE ¼ 747 kV/cm) for a (111) PMN-PT 65/35 thin film deposited on a substrate (Pt(111)/TiO 2 /SiO 2 /Si).…”

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confidence: 99%

Giant isothermal entropy change In (111)-oriented PMN–PT thin film

Hamad

2014

J. Adv. Dielect.

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An isothermal entropy change of 240 nm (111)-oriented PMN–PT 65/35 film near the ferroelectric Curie temperature, relative cooling power (RCP) and change of heat capacity have been investigated. The extracted data characterized giant isothermal entropy change of more than 16 J/kg K in electric field shift ΔE of 455 kV cm-1, which is nearly twice than that found for PbZr 0.95 Ti 0.05 O 3 thin film at 492 kV cm-1 near the Curie point. Furthermore, the RCP ≈ 700 J/kg and change of heat capacity ≈ 233 J/kg K in electric field shift ΔE of 747 kV cm-1.

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“…Ferroelectric refrigeration is based on the EC effect, an entropy change of ferroelectric material during application or withdrawal of electric field. PbMg 1/3 Nb 2/3 O 3 (PMN) ferroelectric materials with compositions near the morphotropic phase boundary are promising for high-strain actuators/transducers and prototype microelectro-mechanical systems due to their well-known ferroelectric, dielectric and piezoelectric properties [17][18][19][20][21][22][23]. In this paper, the dependence of polarization on variation of temperature for (111)-oriented PMN at low electric field is simulated to predict electrocaloric properties under applied electric field shift E  (defined as 2 1 E E  ).…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigations on electrocaloric properties of (111)-oriented PbMg1/3Nb2/3O3 single crystal

Hamad

2013

J Adv Ceram

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Abstract:The electrocaloric (EC) effect accompanied with the ferroelectric to paraelectric phase transition in (111)-oriented PbMg 1/3 Nb 2/3 O 3 (PMN) is investigated. It is shown that the largest change T  is 0.37 K in 3 kV/cm electric field shift near the Curie temperature of 221 K; that is, the cooling T  per unit field (MV/m) is 1.23×10 6 m·K/V. This value is significantly larger, and comparable with the value of 0.254×10 6 m·K/V for PbZr 0.95 Ti 0.05 O 3 thin film under larger electric field shift E  = 30 kV/cm. Thus, the EC effect of (111) PMN single crystal provides cooling solutions at low temperatures, and opens more opportunities for practical application in cooling systems.

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(100) MgAl2O4 as a lattice-matched substrate for the epitaxial thin film deposition of the relaxor ferroelectric PMN-PT

Cited by 9 publications

References 50 publications

Effects of Oxide Seeding Layers on Electrical Properties of Chemical Solution Deposition-Derived Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ Relaxor Thin Films

Effects of Oxide Seeding Layers on Electrical Properties of Chemical Solution Deposition-Derived Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ Relaxor Thin Films

Giant isothermal entropy change In (111)-oriented PMN–PT thin film

Theoretical investigations on electrocaloric properties of (111)-oriented PbMg1/3Nb2/3O3 single crystal

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(100) MgAl2O4 as a lattice-matched substrate for the epitaxial thin film deposition of the relaxor ferroelectric PMN-PT

Cited by 9 publications

References 50 publications

Effects of Oxide Seeding Layers on Electrical Properties of Chemical Solution Deposition-Derived Pb(Mg1/3Nb2/3)O3–PbTiO3 Relaxor Thin Films

Effects of Oxide Seeding Layers on Electrical Properties of Chemical Solution Deposition-Derived Pb(Mg1/3Nb2/3)O3–PbTiO3 Relaxor Thin Films

Giant isothermal entropy change In (111)-oriented PMN–PT thin film

Theoretical investigations on electrocaloric properties of (111)-oriented PbMg1/3Nb2/3O3 single crystal

Contact Info

Product

Resources

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Effects of Oxide Seeding Layers on Electrical Properties of Chemical Solution Deposition-Derived Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ Relaxor Thin Films

Effects of Oxide Seeding Layers on Electrical Properties of Chemical Solution Deposition-Derived Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ Relaxor Thin Films