128-Gb/s DP-QPSK using low-loss monolithic silicon IQ modulator integrated with partial-rib polarization rotator

Goi, Kazuhiro; Kusaka, Hiroyuki; Oka, Akira; Ogawa, Kensuke; Liow, Tsung-Yang; Tu, Xiaoguang; Lo, Guo‐Qiang; Kwong, Dim‐Lee

doi:10.1364/ofc.2014.w1i.2

Cited by 18 publications

(6 citation statements)

References 2 publications

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“…For expanding the communication bandwidth, dual-polarization based application has become more common [11,12]. However, the SSC, as the interface of the chip to optical fiber network, may introduce crosstalk between the two polarization states due to the polarization rotation effect.…”

Section: Discussionmentioning

confidence: 99%

Analysis of the polarization rotation effect in the inversely tapered spot size converter

et al. 2015

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Inversely tapered spot size converter (SSC) is widely used to connect silicon waveguide with fiber in silicon photonics. However, the tapered structure may cause polarization rotation and further generate interference fluctuation in the transmission spectrum even of a straight waveguide. We analyzed the light propagation in a straight waveguide with SSC at the both ends with coupling matrix and transmission matrix methods. The analysis results matched with the phenomena we observed in the transmission spectrum. Combining the analysis with the measurement results, we calculated the polarization rotation efficiency of the SSC in different samples and analyzed the origin of the polarization rotation effect. Finally, we discussed the influence of the effect to the DP-QPSK signal and proposed several methods to release the impact.

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Section: Discussionmentioning

confidence: 99%

Analysis of the polarization rotation effect in the inversely tapered spot size converter

et al. 2015

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“…Previous work has reported 50 Gb/s QPSK modulation [11]. More recently, 64 Gb/s silicon QPSK and 128 Gb/s silicon PDM-QPSK modulators have been realized based on nested Mach-Zehnder modulators (MZMs) using dual-drive push-pull TWEs [12], [13], demonstrating their suitability for next generation optical coherent communications.…”

Section: Introductionmentioning

confidence: 99%

Optimized Silicon QPSK Modulator With 64-Gb/s Modulation Speed

et al. 2015

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We demonstrate a compact silicon quadrature phase-shift keying (QPSK) modulator consisting of two nested Mach-Zehnder interferometers with a size of 4.5-mm 2 . The V Å Á L of the modulator is 1.4 V Á cm with an insertion loss of 8 dB. In addition, 64-Gb/s QPSK modulation is achieved with an error vector magnitude (EVM) of 24.4% and bit error rate (BER) of 2.1 Â 10 À5 at the received optical power of À10 dBm after the device and an EVM of 31.7% and BER of 8.4 Â 10 À4 at the received optical power of 0 dBm after 10-km single-mode fiber transmission. The estimated power consumption is 7.1 pJ/bit for the 64-Gb/s QPSK modulation.

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“…Increasing the channel rate with the baud rate or using multi-level modulation is relatively simple since numbers of photonic and electronic devices inside the transceiver remain constant. The bit rate on a single optical carrier has already exceeded 100 Gb/s [1][2][3][6][7][8][9]. Even when these wide-bandwidth technologies are used, it is necessary to use parallel links [4], wavelengths [1,5,10,11] or polarization multiplexing [3,[6][7][8]12], or combinations of them, to reach the targets of the next and future generations of transceivers, such as 400 Gb/s and 1 Tb/s.…”

Section: Introductionmentioning

confidence: 99%

“…Various kinds of modulators have been proposed and demonstrated, thus far [3,6,8,9,15,. Those using the free-carrier plasma (FCP) effect [41] are particularly suitable for integrated transceivers because they are made with materials and by processes that are compatible with those of standard silicon electronic devices.…”

Section: Introductionmentioning

confidence: 99%

High-speed and efficient silicon modulator based on forward-biased pin diodes

Akiyama

Usuki

2014

Front. Phys.

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Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, α · V π L, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of V π L on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an α · V π L of 9.5 dB·V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This α · V π L was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

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128-Gb/s DP-QPSK using low-loss monolithic silicon IQ modulator integrated with partial-rib polarization rotator

Cited by 18 publications

References 2 publications

Analysis of the polarization rotation effect in the inversely tapered spot size converter

Analysis of the polarization rotation effect in the inversely tapered spot size converter

Optimized Silicon QPSK Modulator With 64-Gb/s Modulation Speed

High-speed and efficient silicon modulator based on forward-biased pin diodes

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