16 W continuous-wave output power from 100 µm-aperture laser with quantum well asymmetric heterostructure

Pikhtin, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Stankevich, A. L.; Vinokurov, D. A.; Tarasov, I. S.; Alfërov, Zh. I.

doi:10.1049/el:20045885

Cited by 117 publications

(39 citation statements)

References 4 publications

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“…The kinks in the QQW structure are possibly due to the formation of ring modes. The output power is comparable to the 16 W for a SQW obtained by [1], but with a clearly lower θ ⊥ of 19° in comparison to 31° in [1]. Fig.…”

Section: Resultssupporting

confidence: 60%

See 1 more Smart Citation

Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

Bugge¹,

Zeimer²,

Wenzel³

et al. 2006

Phys. Status Solidi (c)

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The effect of variation of the number of highly strained InGaAs quantum wells embedded in GaAs layers on the crystal quality of the epitaxial layers and AlGaAs/GaAs laser diodes was investigated. With four quantum wells and very thick waveguide layers, reasonable efficient laser diodes emitting above 1100 nm with a narrow vertical far field (FWHM = 15 °) were obtained. Broad area laser diodes with 200 µm stripe width and an optimised doping profile emit nearly 20 W cw output power.

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Section: Resultssupporting

confidence: 60%

“…An increase of the number of QWs should result in an increased internal efficiency. Therefore, such structures have the potential for very high optical output power [1,2].…”

Section: Introductionmentioning

confidence: 99%

Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

Bugge¹,

Zeimer²,

Wenzel³

et al. 2006

Phys. Status Solidi (c)

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show abstract

“…В настоя-щий момент для диапазона длин волн λ = 800−1100 нм уже существуют инфракрасные лазерные диоды с кпд (η) > 70% [9]. В качестве приемника ЛИ целесообраз-но использовать ФЭП на основе арсенида галлия -оптимального материала, преобразующего излучение c λ ≈ 800−870 нм.…”

Section: Introductionunclassified

Фотоэлектрический приемник лазерного излучения (lambda=809 нм) на основе GаAs

Khvostikov¹,

Sorokina²,

Potapovich³

et al. 2017

Физика И Техника Полупроводников

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На основе однопереходных гетероструктур AlGaAs/GaAs, полученных методом эпитаксии из жидкой фазы, созданы преобразователи лазерного излучения с длиной волны lambda=809 нм. Разработаны и протестированы фотоэлектрические модули с рабочим напряжением 4 В для преобразования излучения различной плотности. Исследованы два подхода --- без использования оптических концентрирующих систем и с применением линз Френеля. В фотоэлектрическом приемнике на основе 64 преобразователей лазерного излучения площадью 0.04 см2 и концентрирующей системы из матрицы кварцевых линз достигнут монохроматический кпд преобразования >44%. DOI: 10.21883/FTP.2017.05.44428.8427

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“…However optical amplifiers have efficiency of approximately 10 % [2]. Meanwhile modern quantum-well (QW) power lasers have efficiency of 70 % and more [3]. In order to realize high-power transmitting paths of nanophotonic equipment the low-power heterolasers -with direct or external modulation and with the following amplification of the modulated optical signal by semiconductor or fiber-optical amplifiers -are utilized.…”

Section: Introductionmentioning

confidence: 99%

Research of Frequency Characteristics and Temperature Drift Power Quantum-Well Lasers

Zaitsev

2011

J. Phys.: Conf. Ser.

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Abstract. In the following paper results of АFC (amplitude-frequency characteristics) and PFC (phase-frequency characteristics) and temperature drift studies as well as of time delay of CW and impulse signals in QW InGaAs lasers with CW output power more than 1W at direct modulation are given. It is demonstrated, that power QW lasers can potentially surpass their low-power analogues and DH lasers on one of the major parameters -product of the maximum modulating frequency (bandwidth) and output modulated RF power.The developed analytical mechanism considers QW power lasers' working features in a static and dynamic mode and enables us to calculate АFC, PFC, their temperature drift and delay of modulating signals with a sufficient for engineering calculations accuracy.

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16 W continuous-wave output power from 100 µm-aperture laser with quantum well asymmetric heterostructure

Cited by 117 publications

References 4 publications

Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

Фотоэлектрический приемник лазерного излучения (lambda=809 нм) на основе GаAs

Research of Frequency Characteristics and Temperature Drift Power Quantum-Well Lasers

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