160 GHz Balanced Frequency Quadruplers Based on Quasi-Vertical Schottky Varactors Integrated on Micromachined Silicon

Alijabbari, Naser; Bauwens, Matthew F.; Weikle, Robert M.

doi:10.1109/tthz.2014.2360983

Cited by 40 publications

(15 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Based on the connected direction of each part, the transition model from waveguide to microstrip line adopts the E‐Plane RF probe 9 . Four stepped lines are used to match the impedance of the integrate circuit to achieve higher performance 10 . The detector equivalent circuit is shown in Figure 2.…”

Section: Analysis and Designmentioning

confidence: 99%

The design of a high voltage responsivity terahertz detector based on improved grounding model

Liu

Zhang

Jin

et al. 2021

Micro & Optical Tech Letters

View full text Add to dashboard Cite

A high voltage responsivity detector in G‐band is designed in this paper. Different grounding models for the terahertz detector are analyzed and designed. Gold wire grounding design is superior to traditional grounding designs, which reduce the influence caused by the doping concentration, position and thickness error of conductive adhesive. Detectors are based on the Virginia Diodes Inc G‐band zero‐bias Schottky diode with low zero‐bias junction capacitance. The voltage responsivity test result of the gold wire grounding detector is about 1800 mV/mW in 210–220 GHz. The development of the detector provides the device basis for the realization of a terahertz focal plane imaging system.

show abstract

Section: Analysis and Designmentioning

confidence: 99%

The design of a high voltage responsivity terahertz detector based on improved grounding model

Liu

Zhang

Jin

et al. 2021

Micro & Optical Tech Letters

View full text Add to dashboard Cite

show abstract

“…As THz applications move up to 1 THz, many stages of multiplication are required as the fundamental input signal are often in the millimeter wave frequency band, where significant driving power (watt-level) is accessible [23]. Therefore, as the first stage of the multiplier chains, the multipliers working within submillimeter wave range are required to increase power handling while guaranteeing high efficiency and output power at the same time.…”

Section: Introductionmentioning

confidence: 99%

Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

et al. 2020

View full text Add to dashboard Cite

In this paper, the development of two high power 220 GHz frequency triplers is proposed. The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz tripler, while the application of GaN Schottky diodes with eight nodes is another attempt to improve power handling of the 220 GHz tripler. To reduce thermal effect of high power multipliers, the AlN substrates with high thermal conductivity are applied to provide better heat dissipation at the diode areas. A combination of electrical and thermal model of the Schottky diodes is established while the optimization of 220 GHz triplers are realized with 3D electromagnetic (EM) simulation and harmonic balanced simulation. Good agreement is achieved between the simulated results based on electro-thermal model and measured performances of the triplers. At room temperature, peak efficiency of the tripler based on GaAs Schottky diodes is 17.8%, while the maximum output of the tripler is 38.2 mW with 300 mW input power. As for the 220 GHz GaN Schottky diode tripler, measured results show that the maximum power handling is beyond 400 mW. The peak efficiency and maximum output are 4.7% and 18.4 mW, respectively. The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.

show abstract

“…Two main strategies exist in the effort to increase the power handling of recent high-power frequency multipliers [8]- [10]. The first one is to increase the number of series or parallel coupled active devices on a chip, an approach that becomes more challenging as the operating frequency and number of active devices increase.…”

Section: Introductionmentioning

confidence: 99%

A Tunable 240–290 GHz Waveguide Enclosed 2-D Grid HBV Frequency Tripler

Dahlbäck

Vukušić

Weikle

et al. 2016

IEEE Trans. THz Sci. Technol.

View full text Add to dashboard Cite

This paper presents a high-power 240-290 GHz waveguide enclosed two-dimensional (2-D) grid heterostructure barrier varactor (HBV) frequency multiplier. A 35 mW of output power is produced at 247 GHz with an input power of 900 mW. The operational bandwidth is tunable within a 50 GHz span by the use of an input tuner able to adjust the input matching of the 2-D grid HBV frequency multiplier. Tuning is achieved by moving a suspended dielectric slab in the input waveguide.

show abstract

160 GHz Balanced Frequency Quadruplers Based on Quasi-Vertical Schottky Varactors Integrated on Micromachined Silicon

Cited by 40 publications

References 16 publications

The design of a high voltage responsivity terahertz detector based on improved grounding model

The design of a high voltage responsivity terahertz detector based on improved grounding model

Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

A Tunable 240–290 GHz Waveguide Enclosed 2-D Grid HBV Frequency Tripler

Contact Info

Product

Resources

About