160-GSa/s-and-Beyond 108-GHz-Bandwidth Over-2-V<sub>ppd</sub> Output-Swing 0.5-μm InP DHBT 2:1 AMUX-Driver for Next-Generation Optical Communications

Hersent, R.; Konczykowska, A.; Jorge, F.; Blache, F.; Nodjiadjim, Virginie; Riet, M.; Mismer, Colin; Renaudier, Jérémie

doi:10.1109/lmwc.2022.3161706

Cited by 14 publications

(4 citation statements)

References 19 publications

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“…4) but also targets high yield, reliability, and large output swing, which translates into higher constraints with respect to pure research processes. It allows the monolithic integration of few hundreds of DHBTs for the design of high-speed and high-performance ICs (see [3], [11], [18], and [44]).…”

Section: Inp Dhbt Technology and Model A Inp-dhbt Process And Perform...mentioning

confidence: 99%

“…This yields a very accurate model of the driver behavior and performances, as shown in Section IV's small-and large-signal measurement-simulation comparisons. Note that the proposed EM-circuit cosimulation technique has also been used in [15], [16], and [17] and was validated on InP-DHBT circuits with significantly higher number of integrated transistors (see [44]) using the same technology.…”

Section: Inp-dhbt Driver Integrated Circuit Em Simulationmentioning

confidence: 99%

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InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design

Hersent,

Johansen,

Nodjiadjim

et al. 2024

IEEE Trans. Microwave Theory Techn.

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In this article, we report on the modeling, design, and characterization of indium phosphide (InP) double heterojunction bipolar transistor (DHBT) devices and integrated circuits (ICs) for next-generation optical communications. Critical aspects of transistors' modeling and their influence on the IC design are detailed, as well as the design and characterization of a lumped linear modulator driver featuring a 3-Vppd four-level pulse-amplitude modulation (PAM-4) output swing at 90 GBaud (GBd). In particular, we propose an electromagnetic (EM) simulation-based parasitic extraction method of the DHBT access structures, to refine the DHBT and IC performance prediction accuracy. It is shown to provide a better estimation of a canonical cascode gain and µ stability factor at millimeterwave frequencies, as well as a better estimation of the driver IC gain in the 50-110 GHz frequency range. Furthermore, a highfrequency gain boosting (self-peaking) topology, based upon an emitter-degenerated paralleled-transistor cascode configuration, is analyzed using a simplified transistor model and leveraged to enhance the linear driver output-stage gain-bandwidth product with controlled amount of peaking gain. This self-peaking technique is shown to be inherent to cascode structures and can therefore be used with other technologies, with no added design complexity. The driver IC was implemented in a 0.5-µm InP-DHBT technology and features a bandwidth well in excess of 110 GHz, with 13 dB of peaking gain at 95 GHz. Besides,

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Section: Inp Dhbt Technology and Model A Inp-dhbt Process And Perform...mentioning

confidence: 99%

Section: Inp-dhbt Driver Integrated Circuit Em Simulationmentioning

confidence: 99%

InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design

Hersent,

Johansen,

Nodjiadjim

et al. 2024

IEEE Trans. Microwave Theory Techn.

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“…The transistors are processed using a wet-etch selfaligned triple mesa technology as described in [8]. This technology, which also includes three levels of gold metallization for interconnections, is compatible with circuit design [9], [10]. Among the characterized devices, different transistor geometries were considered: emitter width varied from 0.4-µm to 0.7-µm while the emitter length varied from 5-µm to 10-µm.…”

Section: A Technology Descriptionmentioning

confidence: 99%

InP DHBT test structure optimization towards 110 GHz characterization

Davy

Deng

Nodjiadjim

et al. 2022

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)

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In this paper, three different designs of test structures are explored in order to accurately characterize InP DHBTs up to 110 GHz. In particular, a new design, optimized for high frequency measurements while keeping high device density, has been proposed. De-embedding test structures are analyzed and InP DHBT RF figures of merit are extracted for the three designs. Extraction of the maximum oscillation frequency, fMAX, confirms the relevance of optimized test structures as well as good performances of the new design.

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“…Among the potential candidates, InP-based technologies have demonstrated impressive cut-off frequencies above 1 THz for both high electron mobility transistors (HEMT) [1] and double heterojunction bipolar transistors (DHBT) [2], [3]. Due to their higher breakdown voltages as well as a better power handling capability, DHBTs are a prime candidate for the design of power amplifiers (PA) operating above 100 GHz [4] as well as for 1.6 Tb/s optical transceivers [5], [6].…”

Section: Introductionmentioning

confidence: 99%

InP DHBT Analytical Modeling: Toward THz Transistors

Davy

Nodjiadjim

Riet

et al. 2023

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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InP double heterojunction bipolar transistors (InP DHBT) are one of the key technologies considered for terahertz applications. Improvement of their frequency performance is challenging and strongly dependent on various parameters (manufacturing process, geometry, epitaxial structure). In this article, a novel method is developed to take into account these parameters and predict the frequency performance of the technology. This approach consists of rebuilding the S-parameter matrix of the small-signal model. Elements of the small signal model are identified, and their assessment is described in detail. Once calibrated with the present state-of-the-art device features, the model shows a good agreement with the measurements. Based on this result, analysis of the emitter and base technological features are performed along with optimizations of the vertical structure. Finally, the necessary optimizations for developing a terahertz transistor are detailed. This works provides guidelines for technological improvement and opens the way for designing transistors operating at frequencies above a terahertz.

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160-GSa/s-and-Beyond 108-GHz-Bandwidth Over-2-V_ppd Output-Swing 0.5-μm InP DHBT 2:1 AMUX-Driver for Next-Generation Optical Communications

Cited by 14 publications

References 19 publications

InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design

InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design

InP DHBT test structure optimization towards 110 GHz characterization

InP DHBT Analytical Modeling: Toward THz Transistors

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160-GSa/s-and-Beyond 108-GHz-Bandwidth Over-2-Vppd Output-Swing 0.5-μm InP DHBT 2:1 AMUX-Driver for Next-Generation Optical Communications

Cited by 14 publications

References 19 publications

InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design

InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design

InP DHBT test structure optimization towards 110 GHz characterization

InP DHBT Analytical Modeling: Toward THz Transistors

Contact Info

Product

Resources

About

160-GSa/s-and-Beyond 108-GHz-Bandwidth Over-2-V_ppd Output-Swing 0.5-μm InP DHBT 2:1 AMUX-Driver for Next-Generation Optical Communications