2.5 Gb/s 8×8 self-routing switch GaAs LSIs for ATM switching systems

Abstract

2 SGb/s 8x8 self-routing switch LSIs have been developed for the asynchronous transfer mode ( ATM ) switching systems The basic architecture of this switch is a Batcher-Banyan networkThis switching system consists of three LSIs using a 0 5pm gate GaAs MESFET technology These LSIs are a switching network LSI for exchanging packet cells, a "NEMAWASHI" network LSI for previously detecting the cells with the same output port address, and a demultiplexer LSI for converting the cells from the switching network into the eight streams per a channel These LSIs are mounted in a 520 pin multi-chip module package The number oftotal logic gates is 13 3k, and the power dissipation is 24W The switching system fully operates at a data rate of 2 6Gb/s, and the throughput is 20 8Gbh