Heterostructures
consisting of vertically stacked two-dimensional
(2D) materials have recently gained large attention due to their highly
controllable electronic properties and resulting quantum phases. In
contrast to the mechanically stacked multilayered systems, which offer
exceptional control over a stacking sequence or interlayer twist angles,
the epitaxially grown 2D materials express unprecedented quality and
stability over wafer-scale lengths. However, controlling the growth
conditions remains a major obstacle toward the formation of complex,
epitaxial heterostructures with well-defined electronic properties.
Here, we synthesized a trilayer graphene heterostructure on the SiC(0001)
substrate with two specific interlayer locations occupied by gadolinium.
We applied multitechnique methodology based on low-temperature scanning
tunneling microscopy/spectroscopy (STM/S) and angle-resolved photoelectron
spectroscopy (ARPES) to determine the intercalant’s locations
in the complex, epitaxial graphene heterostructure. Our approach relies
on very high quality and large, micrometer-scale homogeneity of the
synthesized system. The experimentally determined electronic structure
is dominated by the two topmost graphene layers. Our spectroscopic
results show quantitative agreement between global ARPES, local STM/S,
and density functional theory predictions. The characterized electronic
properties primarily reflect highly anisotropic doping levels between
the two corresponding graphene layers, which significantly affect
the band structure topology. Two pairs of hybridized massive Dirac
bands from our initial synthesisthe bilayer graphene on the
SiC(0001) substrateare transformed upon Gd intercalation into
two pairs of massless Dirac bands with a new hybridization region
in between. Our results open perspectives in the realization of exotic
2D quantum materials via atomically precise synthesis of epitaxial,
multilayered graphene–rare earth heterostructures.