200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching

Abstract

Articles you may be interested inLong-pulse arc-discharge plasma source with cold cathode for diagnostic neutral beam injectora) Rev. Sci. Instrum. 79, 02C106 (2008); 10.1063/1.2821511 Characterization of neutral beam source based on pulsed inductively coupled discharge: Time evolution of ion fluxes entering neutralizer

Emerging Plasma Nanotechnology

“…Thanks to neutralization, when the ion current density in plasma was about several mA/cm 2 , the residual charge could be reduced to several μA/cm 2 by inserting a carbon aperture. The angular spread of the neutral beam was estimated to be 90 ± 5° from the neutral beam energy distribution, 27,28) after which the application of silicon etching using a Cl2-based neutral beam resulted in no undercut. The etch rate uniformity was less than ±5% within the 200-mm diameter substrate and a perfectly uniform etching within a local area of 1 cm 2 on the Si substrate was achieved 27,28) .…”

“…The angular spread of the neutral beam was estimated to be 90 ± 5° from the neutral beam energy distribution, 27,28) after which the application of silicon etching using a Cl2-based neutral beam resulted in no undercut. The etch rate uniformity was less than ±5% within the 200-mm diameter substrate and a perfectly uniform etching within a local area of 1 cm 2 on the Si substrate was achieved 27,28) . The etch rate increased by applying bias power to the neutralization aperture plate, which shows that an accelerated neutral beam was successfully obtained.…”

“…These results indicate that the neutral beam source is scalable, thus making it possible to obtain a large-diameter and uniform neutral beam, which is required for application to mass production. 28) In this paper, we discuss the application of sub-10-nm structure fabrication technology to several devices, [12][13][14][15][16][17][18][19][20][21] a low-k film deposition technique utilizing control of polymerization reactions at the atomic level, 22) and an oxidation reaction for metal oxide (HfO 2 ) deposition. 23)…”

“…The n was 1.90 for the 200-cycle HfO2 film, which is close to the reference value of amorphous HfO2 film. [27][28][29] Since it is a gate dielectric film, amorphous HfO 2 was able to achieve high insulation and a low leakage current. These findings demonstrate that the HfO2 film grown using our neutral beam oxidation technique provided a high-quality HfO 2 /SiO 2 stack film and interface even at room temperature.…”

Method to Evaluate the Influence of Etching Damage on Microcantilever Surface on Its Mechanical Properties

“…NBE was performed under high-rate conditions (250 nm/min) using a mixture of F 2 and Cl 2 gases developed for microelectromechanical systems (MEMS) applications. 23) On the other hand, conventional plasma etching was performed using SF 6 gas. The etching time was set to 10, 20, or 40 s for plasma etching, while the etching time for NBE was 77, 112, or 152 s, so as to achieve the same etching depth in each etching process.…”