2009 Proceedings of the European Solid State Device Research Conference 2009
DOI: 10.1109/essderc.2009.5331553
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200mm manufacturing solution for Coupled Resonator Filters

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“…First we deposited a 250 nm thick silicon oxide (SiO 2 ) layer. The piezoelectric stack consists of 2 μm thick AlN in between 220 nm thick Molybdenum bottom electrode and 220 nm thick Molybdenum top electrode [17] . The AlN is deposited using reactive sputtering from an aluminum target under a nitrogen atmosphere.…”
Section: Technologymentioning
confidence: 99%
“…First we deposited a 250 nm thick silicon oxide (SiO 2 ) layer. The piezoelectric stack consists of 2 μm thick AlN in between 220 nm thick Molybdenum bottom electrode and 220 nm thick Molybdenum top electrode [17] . The AlN is deposited using reactive sputtering from an aluminum target under a nitrogen atmosphere.…”
Section: Technologymentioning
confidence: 99%