24.4: A New Method for Cu Patterning

Abstract

A New Cu patterning method, exhibiting better etching characteristics than the conventional wet etching method is introduced. The new Cu patterning process includes plasma treatment and dilute hydrochloric acid (HCl) treatment. with optimized process condition, under 0.3μm of Cu etch critical dimension bias was obtained. We have successfully fabricated Cu source/drain line for 15.0‐inch XGA LCD panel using this patterning method.