2017
DOI: 10.1002/adom.201700884
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2D Nonlayered Selenium Nanosheets: Facile Synthesis, Photoluminescence, and Ultrafast Photonics

Abstract: nearly 100%) with low-dimensional effect, thus having specific physical features that offer a wealth of potential to both scientific and industrial communities. [1][2][3][4][5] Extensive investigations have demonstrated that layered materials are the most common precursors to produce 2D nanostructures because these materials are constructed from stacked layers wherein weak van der Waals interactions hold together each interplane layer and strong chemical covalent bonding governs each individual in-plane layer.… Show more

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Cited by 181 publications
(118 citation statements)
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“…Their results show that the bandgap of the prepared selenene increases from 1.98 to 2.31 eV with decreasing lateral size. In addition, they also proved that selenene does not oxidize in air and thus has good structural stability . Subsequently, Qin et al used physical vapor deposition method to fabricate high‐quality selenene with a thickness of about 5 nm and transverse size up to 30 microns.…”
Section: Classification Of 2d Crystalsmentioning
confidence: 99%
See 1 more Smart Citation
“…Their results show that the bandgap of the prepared selenene increases from 1.98 to 2.31 eV with decreasing lateral size. In addition, they also proved that selenene does not oxidize in air and thus has good structural stability . Subsequently, Qin et al used physical vapor deposition method to fabricate high‐quality selenene with a thickness of about 5 nm and transverse size up to 30 microns.…”
Section: Classification Of 2d Crystalsmentioning
confidence: 99%
“…Therefore, selenene has promising potentials for applications of thermoelectronics and photoelectronics . In addition, selenene are strongly fluorescent and thus could be useful for imaging …”
Section: Classification Of 2d Crystalsmentioning
confidence: 99%
“…As we know, MoS 2 is an n-type semiconductor with reasonably high electron mobility and a bandgap ranging from 1.2 to 1.8 eV [14,15]. Few-layer BP has a narrow bandgap of ~0.3 eV, and it is a p-type semiconductor with high carrier mobility [7,[16][17][18][19][20][21][22][23][24]. Therefore, the integration of two materials to form a heterojunction can enable a large bandgap offset achieving good rectifying characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…These as‐prepared 2D GeP nanosheets have a broad lateral dimension range from about 180 to 410 nm ( Figure a). The nonuniformity in size of the 2D materials is common in LPE preparations . Some large GeP nanosheets were also observed to exhibit low contrast, suggesting their thin feature.…”
Section: Resultsmentioning
confidence: 96%