2015
DOI: 10.7567/jjap.54.04dp07
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3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter

Abstract: We have successfully developed 4H-SiC devices including metal–oxide–semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) with a rated voltage of 3.3 kV. The conduction loss of the SiC-MOSFET was reduced to as low as that of the Si-insulated gate bipolar transistor (IGBT) by the n-type doping of the junction field-effect transistor region (JFET doping). The JFET doping technique is effective in reducing the temperature coefficient of resistance in the JFET region, leading to the d… Show more

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Cited by 77 publications
(39 citation statements)
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“…For instance, Bombardier Transportation has adopted a resolution that all manufactured vehicles will aim at a 100% recovery rate. This will be possible by minimizing the utilization of hazardous materials and substances, by increasing the applications of recycling-friendly materials, such as Aluminum and steel, and avoiding excess number of materials [47][48][49][50][51][52][53][54][55][56].…”
Section: Discussion On the Potential Of Rolling Stock Recyclingmentioning
confidence: 99%
See 2 more Smart Citations
“…For instance, Bombardier Transportation has adopted a resolution that all manufactured vehicles will aim at a 100% recovery rate. This will be possible by minimizing the utilization of hazardous materials and substances, by increasing the applications of recycling-friendly materials, such as Aluminum and steel, and avoiding excess number of materials [47][48][49][50][51][52][53][54][55][56].…”
Section: Discussion On the Potential Of Rolling Stock Recyclingmentioning
confidence: 99%
“…As already mentioned, recycling glass lessens the demand for energy and cuts CO 2 emissions: for every 6 tons of recycled glass used, a ton of carbon dioxide is reduced. Furthermore, since glass recycling is a closed-loop system, it does not create additional waste [53].…”
Section: Discussion On the Potential Of Rolling Stock Recyclingmentioning
confidence: 99%
See 1 more Smart Citation
“…The total volume and mass of the converter were reduced by 65% and 45%, respectively, compared with its Si-IGBT counterpart. On the other hand, all-SiC modules for traction and auxiliary inverters have been developed by Hitachi (3.3 kV/800 A) and Mitsubishi (3.3 kV/1500 A) in the last few years [15,105]. Specifically, all-SiC traction inverters with SiC MOSFETs are installed onboard the EMUs operated by Odakyu Electric Railways in Japan.…”
Section: Silicon Carbide Power Devicesmentioning
confidence: 99%
“…This is due to a low resistance of the relatively thick drift region, enabled by conductivity modulation. Unipolar devices with a drift layer thickness of 12-30 µm result in V b = 1.2−3.3 kV, while for bipolar devices a drift layer thickness of 160-230 µm results in V b = 20−27 kV [85]- [88]. The optimal transition point between unipolar and bipolar devices depends on the application, but is predicted at around 10 kV [89].…”
Section: B High-power Sic Devicesmentioning
confidence: 99%