3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment

Zhang, Jinxin; He, Chaohui; Guo, Hao; Tang, Du; Xiong, Chao; Li, Pei; Wang, Xin

doi:10.1016/j.microrel.2015.06.003

Cited by 11 publications

(9 citation statements)

References 14 publications

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“…The area within the STI is affirmed the sensitive volume for base. According to the results of the heavy ion micro-beam test, the simulation model is verified reasonable in our pervious works [6,7]. Conclusion.…”

supporting

confidence: 67%

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

Zhang

Guo

Zhang

et al. 2017

Sci. China Inf. Sci.

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supporting

confidence: 67%

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

Zhang

Guo

Zhang

et al. 2017

Sci. China Inf. Sci.

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“…The TCAD model is calibrated with the parameters measured by using Keithley 4200 and the heavy-ion-induced SEE results. [19][20][21][22] The structure of back junction SiGe HBT is shown in Fig. 1(b).…”

Section: Device Structuresmentioning

confidence: 99%

Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD*

Wei¹,

He²,

Li³

et al. 2019

Chinese Phys. B

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In this paper we investigate two techniques for single event effect (SEE) mitigation by using back junction and p+ buffer layer in non-deep trench isolation (DTI) domestic silicon–germanium heterojunction bipolar transistors (SiGe HBTs) based on technology computer aided design (TCAD) simulation. The effectiveness of the two mitigation techniques and the influence of various structure parameters are investigated. Simulation results indicate that the two techniques are more effective in reducing collector charge collection induced by heavy ions striking at positions outside the collector–substrate (C–S) junction where charge collection is dominated by diffusion. By properly adjusting the parameters, charge collection of events outside the C–S junction can be reduced by more than an order of magnitude, while charge collection of events in the device center is halved without affecting the direct current (DC) and alternating current (AC) characteristics of the SiGe HBTs.

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“…The epitaxial base uses boron doping of 1×10 19 cm −3 . Thirdly, the arsenic doping of collector uses gaussian distribution which the maximum is 1×10 18 cm −3 at the center and the minimum is 6×10 15 cm −3 at the boundaries of the base region. The substrate is uniformly doped boron about 6×10 14 cm −3 .…”

Section: Device Structurementioning

confidence: 99%

“…Figure 2 shows the internal structure and the impurities distribution of the SiGe HBT. In our previous work, [14][15][16] the Gummel characteristic and output characteristic calculated by simulation are compared with that characteristics measured by KEITH-LEY 4200. The results show that the model is in relatively agreement with the actual device.…”

Section: Device Structurementioning

confidence: 99%

“…[12,13] Our team has been working on the SEEs of the SiGe HBT since 2010, including the influence of bias conditions, angle of ions striking, and extreme environment on SEEs. [14][15][16] According to these researches, it is inferred that the SEEs of SiGe HBT is likely related to the fabrication process information such as structure size and doping concentration. However, the SEEs of SiGe HBT for dif-ferent processes are rarely reported.…”

Section: Introductionmentioning

confidence: 99%

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Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Zhang¹,

He²,

Guo³

et al. 2017

Chinese Phys. B

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The fabrication process dependent effects on single event effects (SEEs) are investigated in a commercial silicongermanium heterojunction bipolar transistor (SiGe HBT) using three-dimensional (3D) TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.

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3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment

Cited by 11 publications

References 14 publications

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD*

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

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3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment

Cited by 11 publications

References 14 publications

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD*

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

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Resources

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Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD*