An AMOLED panel using hybrid backplane technology based on p-type low temperature polycrystalline silicon (p-LTPS) and n-type indium-galliumzinc-oxide (n-IGZO) thin-film transistors (TFTs) has been successfully manufactured. New pixel and Gate-on-Array (GOA) circuits were designed and fabricated using this technology. GOA with CMOS inverter is realized by utilizing both IGZO and p-LTPS. The hybrid backplane AMOLED panel can operate between 1 and 120 Hz, which enables both high refresh rate and low standby power display applications. Furthermore, the AMOLED panel lifetime has markedly enhanced by improving IGZO TFT's uniformity and reliability.