38.3: Top‐COM‐Based PLS Mode for Embedded Touch Screen Applications

Han, Sang Youn; Oh, Keunchan; Seong, Dong Gi; Ham, Yeon‐Sik; Lyu, Jae‐Jin; Lee, Mi-Ae; Lee, Kyehun; Shin, Jaemin; Park, SangWoo

doi:10.1889/1.3256840

Cited by 7 publications

(3 citation statements)

References 4 publications

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“…Most of the TSPs already seen in the market are out‐cell type, and current development efforts focus on on‐cell and in‐cell types because of their thin and light LCD module. Table shows typical out‐cell, on‐cell, and in‐cell technologies and their features …”

Section: Introductionmentioning

confidence: 99%

An in‐cell capacitive touch sensor integrated in an LTPS WSVGA TFT‐LCD

Tomita¹,

Okada²,

Takahashi³

2012

J Soc Info Display

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This paper discusses an In‐cell capacitive touch sensor and its integration in an LTPS TFT‐LCD with 7‐inch screen size and WSVGA resolution. The operation of the newly developed sensor is based on capacitive coupling between user's finger and the detection electrode on the TFT substrate, and is purely capacitive. The sensors and the sensor driver circuits have been integrated in the TFT substrate of the prototype TFT‐LCD using LTPS technology. The prototype having 256x150 sensors shows advantages such as smooth operation with no touch force, high position accuracy, multi‐touch (10 or more), a thin and light LCD module, high display quality, and thus is suitable for various applications such as cell‐phones, smart‐phones, mobile‐PCs, and automotive‐use displays.

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Section: Introductionmentioning

confidence: 99%

An in‐cell capacitive touch sensor integrated in an LTPS WSVGA TFT‐LCD

Tomita¹,

Okada²,

Takahashi³

2012

J Soc Info Display

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“…Also, theoretically higher touch resolutions as well as much lower cost for touch function are expected when sensors are inserted in each pixel [1], [2]. Many different in-cell touch technologies have been developed to implement multi-touch functions into the display panel, such as the digital switching technology [3], the projected capacitive method [4], [5] and the photo sensor type [6]- [8]. These have their own advantages over other methods that they have been applied in a different sized or types of display panel.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of a-SiGe:H Thin Film Transistor for Infrared Image Sensors in Touch Sensing Display

Han

Park

Jeon

et al. 2012

J. Display Technol.

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We report the effects of monochromatic illumination on the electrical performance of a-SiGe:H thin-film transistor (TFT) and the use of this device as infrared (IR) image-sensing touch displays. In order to reduce the inevitable incidence of visible light into device, the visible cutting layer was designed, which played a critical role in reducing the optical noise from visible light. When the photo response was observed in real liquid crystal display (LCD) operation environment, it showed the display contents dependence, meaning that the supply of external IR light source for the touch sensing would be effective independent of any ambient light condition. Additionally, the optical noise from the display operation was eliminated using the block operation as well as the backlight IR light-emitting diode (LED) light modulation. From these, the clear touch images were successfully obtained in the a-SiGe:H photosensor embedded LCD panel.Index Terms-Amorphous SiGe, infrared (IR) detector, photosensor, thin-film transistor (TFT).

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“…The external device on a panel, however, significantly blurs display image as the panel thickness is inevitably increased. The only possible approach up to now to retain the original image quality is to incorporate sensors with the panel [1]- [3].…”

Section: Introductionmentioning

confidence: 99%

25.1: Characteristics of Infrared Photosensor Using Amorphous SiGe for In‐cell Touch Panel

Han

Jeon

Seo

et al. 2012

Symp Digest of Tech Papers

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The a-SiGe:H TFT photosensor for embedded touch screen panel (TSP) was characterized compared with a-Si:H TFT. The photo sensitivity of a-SiGe:H sensor at 850 nm IR light was ~15 times higher than that of a-Si:H, indicating that a-SiGe:H is a strong candidate material to an IR sensor. In order to increase the signal to noise ratio, the incoming of visible layer was blocked by visible cutting layer. A 40-inch panel in which a-SiGe:H IR sensor was embedded was successfully demonstrated, showing the excellent multi-touch property without ambient light interferences. This technology can be applied to broad use in the multi-functional TSPs without ambient light limitation.

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38.3: Top‐COM‐Based PLS Mode for Embedded Touch Screen Applications

Cited by 7 publications

References 4 publications

An in‐cell capacitive touch sensor integrated in an LTPS WSVGA TFT‐LCD

An in‐cell capacitive touch sensor integrated in an LTPS WSVGA TFT‐LCD

Optical Properties of a-SiGe:H Thin Film Transistor for Infrared Image Sensors in Touch Sensing Display

25.1: Characteristics of Infrared Photosensor Using Amorphous SiGe for In‐cell Touch Panel

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