3C-SiC: New Interest for MEMS Devices

Abstract

The aim of this paper is to review the recent developments conducted by our groups for the achievement of 3C-SiC based heterostructures compatible for MEMS applications. It deals with different aspects, from the influence of the defects generated at the 3C-SiC/Si interface on the mechanical properties to the elaboration of new multilayered structures, required for specific applications like, for example, Atomic Force Microscopy.

(Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

“…As shown in Fig. 3b, in addition to the original squared spacer opening (7x7mm 2 ) we explored the same square opening as the original one, but rotated by 45 degrees with respect to the [11][12][13][14][15][16][17][18][19][20] direction, as well as a circular one with a diameter of 7 mm. In both cases the area of the large terrace is reduced compared to the original spacer opening.…”

“…stacking faults, which are formed at the 3C-SiC/substrate interface. This problem is more pronounced in 3C-SiC grown on Si due to the large mismatch in lattice parameters and thermal expansion coefficients, despite that the majority of functioning devices, varying from MOSFETs to MEMS, have been demonstrated using such material (11)(12)(13)(14). Therefore, it can be expected that mastering the growth and doping of 3С-SiC on hexagonal SiC substrates, especially providing high resistivity 3C-SiC material, would allow validating semiconductor devices of improved performance.…”

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

“…As shown in Fig. 3b, in addition to the original squared spacer opening (7x7mm 2 ) we explored the same square opening as the original one, but rotated by 45 degrees with respect to the [11][12][13][14][15][16][17][18][19][20] direction, as well as a circular one with a diameter of 7 mm. In both cases the area of the large terrace is reduced compared to the original spacer opening.…”

“…This problem is more pronounced in 3C-SiC grown on Si due to the large mismatch in lattice parameters and thermal expansion coefficients, despite that growth of a large area 3C-SiC and the majority of functioning devices, varying from MOSFETs to MEMS, have been demonstrated using such material. [10][11][12][13][14][15][16][17][18] Therefore, it can be expected that mastering the growth and doping of 3C-SiC on hexagonal SiC substrates, especially providing high resistivity 3C-SiC material, would allow validating semiconductor devices of improved performance.…”