3D Silicon Photonic Structures Based on Avalanche LED with Interconnections through Optical Interposer

Abstract

Design and manufacturing technology of 3D silicon photonic structures with optical interconnections through microchannel vias interposers were developed. Silicon chips placed over each other were separated by the silicon microchannel vias interposer served as a light waveguide. Light emitting diodes and photodiodes were formed at the inner surfaces of silicon chips from nanostructured silicon clusters embedded into alumina matrix. The developed structure is characterized by the current conversion efficiency of 0.1% and can operate in the GHz frequency range.

Avalanche-Mode Si Light-Emitting Transistor for Narrow-Band Emission Near 760 nm

“…The AM-EL of Si has a significant spectral overlap with the responsivity of Si photodiodes [7], [13], with the range of human vision [14], and with the absorption spectrum of various biochemical entities [15], [16]. As such, despite the low optical power efficiency (η opt ∼10 −6 ), AM Si LEDs have successfully emerged as light-sources in monolithic optical interconnects [5], [8], [17], pigment sensors [18], and CMOS micro-displays [11]. The performance metrics in such endapplications, e.g.…”

Avalanche leds based on nanostructured silicon for optical interconnections

“…Ими достигнута эффективность оптоэлектронной передачи сигнала (коэффициент передачи по току) 10 -8 . В работе [24] было показано, что эффективность оптоэлектронной передачи сигнала может достигать 10 -3 , а расчетная рабочая частота лавинных светодиодов находится в терагерцовом диапазоне.…”