4.5 kV-2000 A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)

Fujii, Takeshi; Yoshikawa, K.; Koga, Tomoyuki; Nishiura, Akira; Takahashi, Yoshikazu; Kakiki, Hideaki; Ichijyou, M.; Seki, Y.

doi:10.1109/ispsd.2000.856767

Cited by 10 publications

(10 citation statements)

References 4 publications

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“…There is no algorithm-base parameter optimisation process involved. The physical temperaturesensitive parameters are all calculated by (18)- (20) above.…”

Section: Resultsmentioning

confidence: 99%

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Physics‐based insulated‐gate bipolar transistor model with input capacitance correction

Yang¹,

Otsuki

Palmer³

2015

IET Power Electronics

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IGBT terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling, particularly Miller capacitance modelling, is a difficult task due to their operating-point-dependent characteristics. Previously, for the planar gate IGBT, the Miller capacitance's voltage dependency is modelled by considering the depletion region growth pattern. For modern trench gate design, however, there is no similar dynamic process available. Also, its current dependency needs to be taken account of. This paper presents an improved IGBT physics-based model with proper terminal capacitance correction. By comparison of experimental and simulation results, the proposed model works brilliantly for different types of IGBTs (including the state-of-art trench-gate field-stop type) over a wide range of operating conditions.

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“…There is no algorithm-base parameter optimisation process involved. The physical temperaturesensitive parameters are all calculated by (18)- (20) above.…”

Section: Resultsmentioning

confidence: 99%

“…where V tho is the device threshold voltage at T a = 27°C (20) where K p0 is the transconductance at 27°C [6].…”

Section: Parameter Extractionmentioning

confidence: 99%

Physics‐based insulated‐gate bipolar transistor model with input capacitance correction

Yang¹,

Otsuki

Palmer³

2015

IET Power Electronics

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“…One approach is illustrated in Fig. The concept has been extended to modules capable of supporting 4.5 kV for use in industrial, traction, and power transmission applications [7]. This module contains nine IGBT chips and three rectifier chips to achieve a current handling capability of 1000 A with a voltage blocking capability of 2.5 kV.…”

Section: Flat-pack Power Modulementioning

confidence: 99%

Package and Module Design

Baliga

2015

The IGBT Device

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“…Three-level control can reduce the harmonic and filter parameters, but its disadvantages are that the control is complex and many devices are required. We can only use 6500 V IGBTs to achieve a 3600 V intermediate DC voltage in the two-level converter circuit, and thus the selection of devices is narrow [6][7][8][9]. At present, the current tolerance of 6500 V IGBTs is generally 300-750 A, and the current capacity is low.…”

Section: Introductionmentioning

confidence: 99%

Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter

et al. 2017

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6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density. Reverse Conducting IGBT (RC-IGBT) constructs the conventional IGBT function and freewheel diode function in a single chip, which has a greater flow ability in the same package volume. In the same cooling conditions, RC-IGBT allows for a higher operating temperature. In this paper, a mathematic model is developed, referring to the datasheets and measurement data, to study the 6.5 kV/1000 A RC-IGBT switching features. The relationship among the gate desaturated pulse, conducting losses, and recovery losses is discussed. Simulations and tests were carried out to consider the influence of total losses on the different amplitudes and durations of the desaturated pulse. The RC-IGBT traction converter system with gate pulse desaturated control is built, and the simulation and measurements show that the total losses of RC-IGBT with desaturated control decreased comparing to the RC-IGBT without desaturated control or conventional IGBT. Finally, a proportional small power platform is developed, and the test results prove the correction of the theory analysis.

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4.5 kV-2000 A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)

Cited by 10 publications

References 4 publications

Physics‐based insulated‐gate bipolar transistor model with input capacitance correction

Physics‐based insulated‐gate bipolar transistor model with input capacitance correction

Package and Module Design

Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter

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