4.5 μm wavelength vertical external cavity surface emitting laser operating above room temperature

Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.

doi:10.1063/1.3139778

Cited by 49 publications

(20 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is used extensively in optical devices [3,6], lasers [7,8] and thermoelectric devices [4,9,10]. The large Bohr exciton radius of about 46nm in PbSe makes it a suitable system to study quantum confinement effects on electrons and holes [6,[11][12][13].…”

mentioning

confidence: 99%

Atomistic study of electronic structure of PbSe nanowires

Paul

Klimeck

2011

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 99%

Atomistic study of electronic structure of PbSe nanowires

Paul

Klimeck

2011

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…More than 3 W output has been achieved at 2250 nm using 980 nm diode pump with a single-chip [81] and dual-chip [184] configurations, and at 2350 nm using 1960 nm thulium-doped fiber laser for in-well pumping [48,185]. Even longer wavelength VECSELs with emission wavelength near 4.5 and 5 mm have been demonstrated using IV-VI lead-chalcogenide semiconductor material systems of PbTe (PbSe)/PbEuTe on both BaF 2 and Si substrates [82][83][84][85]. The long-wavelength VECSELs are discussed in more detail in Chapter 4.…”

Section: Demonstrated Power Scaling and Wavelength Coveragementioning

confidence: 90%

“…Starting with GaSb substrate with ternary (e.g., GaInSb, AlAsSb) and quaternary (e.g., GaInAsSb, GaAlAsSb) alloys, VECSELs with emission wavelengths in the 2.0-2.3 mm range have been demonstrated (Chapter 4) [23,48,81,94]. Recently, group IV-VI semiconductor PbTe/PbEuTe and PbSe/PbEuTe-based material systems have been used to demonstrate VECSELs in the 4.5-5 mm wavelength range [82][83][84][85]. VECSELs have also been fabricated in the GaN/InGaN material system [95,96], which opens the 400 nm wavelength region for direct VECSEL operation.…”

Section: Wavelength Versatility Through Semiconductor Materials and Smentioning

confidence: 99%

“…Pump lasers at 790, 808, 830, and 980 nm have been used to pump 2.0-2.3 mm lasers [81,94,105,106]. Pump wavelength of 1.55 mm has been used for pumping 5 mm lasers [82][83][84][85]. Thus, pump wavelength versatility is an important contributor to the emission wavelength versatility in VECSELs.…”

Section: Wavelength Versatility Through Semiconductor Materials and Smentioning

confidence: 99%

“…One of the most important properties of VECSEL lasers is their wavelength versatility: VECSELs have been made with output wavelengths ranging from 244 nm [77] and 338 nm [24,78] in the UV; through the 460-675 nm range of blue, green, yellow, orange, and red in the visible (Chapter 3) [22, 24, 52-54, 58, 79]; through the 0.9-2.4 mm in the near-infrared (NIR) (Chapter 4) [18,23,67,68,80,81]; to the 5 mm in the mid-IR [82][83][84][85]. In principle, any wavelength in this range is accessible by design.…”

Section: Vecsel Wavelength Versatility Through Materials and Nonlineamentioning

confidence: 99%

See 2 more Smart Citations

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

View full text Add to dashboard Cite

Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

show abstract

Semiconductor Lasers

2020

Laser‐based Mid‐infrared Sources and Applications

View full text Add to dashboard Cite

4.5 μm wavelength vertical external cavity surface emitting laser operating above room temperature

Cited by 49 publications

References 9 publications

Atomistic study of electronic structure of PbSe nanowires

Atomistic study of electronic structure of PbSe nanowires

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Semiconductor Lasers

Contact Info

Product

Resources

About