650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology

Wu, Yuzhou; Li, Zehong; Jia, Ping; Chen, Chong; Yu, Jiuying; Ren, Min; Zhang, Bo

doi:10.1109/led.2022.3154782

Cited by 18 publications

(2 citation statements)

References 16 publications

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“…Conversely, for P-body/P-pillar disconnected SJ-IGBTs (i.e. floated P-pillar, FP-SJ-IGBTs), since potential of the cathode of P-pillar floats, carriers can be stored in the P-pillar, and the conductivity modulation is enhanced [9][10][11]. Consequently, the V on,FP is significantly reduced compared with the V on,CP at the cost of larger E off .…”

Section: Introductionmentioning

confidence: 99%

Actively controlled anode auxiliary gate super-junction insulated gate bipolar transistor with extremely low Eoff

Chen

et al. 2023

Semicond. Sci. Technol.

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The Super-junction Insulated Gate Bipolar Transistor (SJ-IGBT), due to its unipolar/bipolar mixed conduction mechanism, the approaches to improve its $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ are not exactly the same as non-SJ IGBTs. For the pursue of extremely low $\textit{E}_\textbf{off}$, a planar auxiliary anode gate SJ-IGBT (AAG-SJ-IGBT) is proposed based on 650V SJ-IGBT to realize a unipolar turn-off as SJ-MOSFETs accompanied with fast switching and extremely low $\textit{E}_\textbf{off}$. The planar auxiliary anode gate provides similar effects but better feasibility than conventional trench ones. Sentaurus TCAD simulation results of the proposed AAG-SJ-IGBT indicates the -69\% smaller $\textit{t}_\textbf{doff}$ and -54\% lower $\textit{E}_\textbf{off}$ than the FP-SJ-IGBT, and its $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ is significantly optimized from cathode improved SJ-IGBTs. The analysis of carrier and current density reveals the static and dynamic characteristics of the AAG-SJ-IGBT and the principle for excellent $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ Trade-off.

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Section: Introductionmentioning

confidence: 99%

Actively controlled anode auxiliary gate super-junction insulated gate bipolar transistor with extremely low Eoff

Chen

et al. 2023

Semicond. Sci. Technol.

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“…Traditional ways for RC-IGBT to alleviate the snapback effect has been concentrated on the anode side [3,4], but their structures are generally complexity. Super-junction (SJ) technology has been proven owing the ability of alleviating the snapback effect in RC-SJBTs [5] and reduce switching loss of IGBTs [6,7], the reduced switching loss is also beneficial for reducing heat source, but it has not been applied into RC-IGBT designs. Local life time control [8,9] and Schottky controlled injection (SC) [10][11][12] are usually adopted to improve reverse recovery characteristics of FWD in RC-IGBTs, but they also deteriorate on-state characteristics of IGBT.…”

Section: Introductionmentioning

confidence: 99%

A novel 650 V snapback-free PMOS-RC-SJBT with low switching and reverse recovery losses

Yang,

Li,

et al. 2023

Semicond. Sci. Technol.

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A novel 650 V Snapback-free Reverse-conducting Super-junction (SJ) insulated gate bipolar transistor (RC-SJBT) with low switching and reverse recovery loss is proposed and investigated in paper. In where, SJ pillar acts as the drift region, meanwhile PMOS and Schottky are combined on the cathode side. Under the action of SJ pillar, the snapback is effectively suppressed and V o n − E o f f trade-off of IGBT is also improved. The PMOS and Schottky combined structure enhances on-state carriers of IGBT meanwhile reduces hole injection efficiency during reverse recovery of freewheel diode, thus the reverse recovery switching loss ( E r e c ) of PMOS-RC-SJBT is reduced without sacrificing IGBT’s performance. Investigated by the TCAD tools, the total switching loss of PMOS-RC-SJBT is reduced by 51.2% from Con. RC-IGBT and 40.6% than the latest commercial RC-IGBT IKWH30N65WR6 of Infineon. Besides that, t s c is increased by 35.3% than RC-SJBT. Additionally, the snapback-free P-collector width is reduced from 340 µm of Con.RC-IGBT to 40 µm of PMOS-RC-SJBT, where the current uniformity is substantially improved.

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Dual injection enhanced super junction TIGBT with narrow mesa and floating-P region

Zhang,

Li,

Huang

et al. 2024

J Comput Electron

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650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology

Cited by 18 publications

References 16 publications

Actively controlled anode auxiliary gate super-junction insulated gate bipolar transistor with extremely low Eoff

Actively controlled anode auxiliary gate super-junction insulated gate bipolar transistor with extremely low Eoff

A novel 650 V snapback-free PMOS-RC-SJBT with low switching and reverse recovery losses

Dual injection enhanced super junction TIGBT with narrow mesa and floating-P region

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