77GHz power amplifier design using WIN 0.1&amp;#x03BC;m GaAs pHEMT process

Lai, K. Robert; Wu, Kun-Long; Hu, Robert; Jou, Christina F.

doi:10.1109/ursigass.2014.6929428

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A 77–100 GHz power amplifier using 0.1-μm GaAs PHEMT technology

Qin¹,

Liu

Xu³

et al. 2017

J. Semicond.

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A wideband MMIC power amplifier at W-band is reported in this letter. The four-stage MMIC, developed using 0.1 μm GaAs pseudomorphic HEMT (PHEMT) technology, demonstrated a flat small signal gain of 12.4 ± 2 dB with a minimum saturated output power (Psat) of 14.2 dBm from 77 to 100 GHz. The typical Psat is better by 16.3 dBm with a flatness of 0.4 dB and the maximum power added efficiency is 6% between 77 and 92 GHz. This result shows that the amplifier delivers output power density of about 470 mW/mm with a total gate output periphery of 100 μm. As far as we know, it is nearly the best power density performance ever published from a single ended GaAs-based PHEMT MMIC at this frequency band.

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