8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications

Wohlert, David; Peterson, Bror; Kywe, Thi Ri Mya; Ledezma, Luis; Gengler, Jeff

doi:10.1109/bcicts45179.2019.8972750

Cited by 26 publications

(4 citation statements)

References 9 publications

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“…A three‐stage Doherty amplifier for 28‐GHz 5G was presented in Wohlert et al 27 Peak power of approximately 8 watts and PAE of 24 % at 6‐dB PBO were achieved for 27‐ to 29.5‐GHz frequency of operation. A 28‐GHz single stage, symmetric Doherty PA was presented in Rostomyan et al 28 A symmetric Doherty PA is one in which main and auxiliary amplifiers are identical.…”

Section: Efficiency Enhancement Techniquesmentioning

confidence: 99%

Review of efficiency enhancement techniques and linearization techniques for power amplifier

Singh

Malik

2021

Circuit Theory & Apps

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Summary Power amplifier is one of the most important module of transceiver design. Linearity and efficiency are the two main areas of improvement in power amplifier design. Fifth generation (5G) mobile communication is one of the most important application of power amplifier, which require power amplifiers that are extremely linear and efficient. In this paper, review of different efficiency enhancement and linearization techniques has been undertaken. Basic architecture, advantages, and challenges of efficiency enhancement techniques—outphasing, Doherty, and envelope tracking—have been discussed. Linearization techniques—feedback, feedforward, and predistortion—have also been discussed in this paper.

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Section: Efficiency Enhancement Techniquesmentioning

confidence: 99%

Review of efficiency enhancement techniques and linearization techniques for power amplifier

Singh

Malik

2021

Circuit Theory & Apps

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“…7 The research on the existing DPA mainly focuses on its back-off performance, linearity, and other indicators, while the research on the stability network is less. [8][9][10][11][12][13][14][15] In our previous work, the main research has also focused on improving the efficiency, enhancing and optimizing load modulation methods, and simplifying simulation design. [16][17][18][19] The current focus of stability research for power amplifiers lies in updating and optimizing discrimination methods, such as utilizing new Computer Aided Design (CAD) tools.…”

Section: Introductionmentioning

confidence: 99%

“…The research on the existing DPA mainly focuses on its back‐off performance, linearity, and other indicators, while the research on the stability network is less 8–15 . In our previous work, the main research has also focused on improving the efficiency, enhancing and optimizing load modulation methods, and simplifying simulation design 16–19 .…”

Section: Introductionmentioning

confidence: 99%

A Gallium Nitride (GaN) Doherty power amplifier chip design based on series RC stability network

Li,

Zhu,

Liu

et al. 2023

Circuit Theory & Apps

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SummaryThis paper presents Doherty power amplifier (DPA) based on gallium nitride (GaN) technology, incorporating a parallel grounded network with series RC elements in front of the carrier and peaking amplifiers to enhance circuit stability. In comparison to the traditional series network with parallel RC structure, this configuration effectively reduces the sensitivity of the stability factor K to the capacitance value within the stability network. Consequently, it mitigates the impact on various performance indicators such as gain and drain efficiency, addressing the issue of measurement performance deviation caused by inaccurate capacitance models in the simulation files, which is particularly crucial for DPA. As a result, the circuit exhibits improved consistency in design and processing. With full band stability, the DPA achieves a saturation output power of approximately 29.8 dBm at 28 GHz, a saturation efficiency of 38.2%, and a 6‐dB back‐off efficiency of 29.6%.

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“…On the other hand, gallium nitride (GaN) is nowadays the reference technology for the implementation of high-power and efficient power amplifiers. Although, over-W output power mm-wave DPAs in GaN technology have been already demonstrated [9][10][11][12][13][14], these works suffered from a limited gain performance. This means that they require a high input power, thus transferring to the pre-amplifier design requirements, such as output power, linearity, and efficiency.…”

Section: Introductionmentioning

confidence: 99%

A Ka-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications

Parisi,

Papotto,

Nocera

et al. 2023

Electronics

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This paper presents a Ka-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power splitter, thanks to which it delivers its output power to the two power amplifier units of the Doherty topology, namely the main and auxiliary amplifier. Finally, the outputs of the two power amplifiers are properly arranged in a current combining scheme that enables the typical load modulation of the Doherty architecture, alongside allowing power combining at the final output. The proposed amplifier achieves a small signal gain of around 30 dB at 27 GHz, while providing a saturated output power of 32 dBm, with a power-added efficiency (PAE) as high as 26% and 18% at peak and 6 dB output power back-off, respectively.

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8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications

Cited by 26 publications

References 9 publications

Review of efficiency enhancement techniques and linearization techniques for power amplifier

Review of efficiency enhancement techniques and linearization techniques for power amplifier

A Gallium Nitride (GaN) Doherty power amplifier chip design based on series RC stability network

A Ka-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications

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