A 0.8-μm BiCMOS technology for ASIC applications

Abstract

A new process is demonstrated for a 0.8-pm BiCMOS process flow by forming a base oxide for NI" transistors using high-pressure oxidation. This process allows for improved control over the base implant dose: in the depth of the peak dose, in the precise control of the amount of implant, and in spread of the dose due to thermal processing. Data is presented showing the advantages of this process flow, and some circuit information is given.