A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface

Yuh, J.; Li, Yen-Lung Jason; Li, Heguang; Oyama, Yoshihiro; Hsu, Cynthia; Anantula, Pradeep; Jeong, Gwang Yeong Stanley; Amarnath, Anirudh; Darne, Siddhesh; Bhatia, Sneha; Tang, Tianyu; Arya, Aditya; Rastogi, Naman; Ookuma, Naoki; Mizukoshi, Hiroyuki; Yap, Alex; Wang, Demin; Kim, Steve; Wu, Yonggang; Peng, Min; Lu, Jason; Ip, Tommy; Malhotra, Seema; Han, Taekeun; Okumura, Masatoshi; Liu, Jiwen; Sohn, Jeongduk John; Chibvongodze, Hardwell; Balaga, Muralikrishna; Matsuda, Akihiro; Chen, Chen; V, Indra K; G., V. S. N. K. Chaitanya; Ramachandra, Venky; Kato, Yasuyuki; Kumar, Ravi; Wang, Huijuan; Moogat, Farookh; Yoon, In-Soo; Kanda, K.; Shimizu, Toshihisa; Shibata, Noboru; Yanagidaira, Kosuke; Kodama, Tetsuya; Fukuda, R.; Hirashima, Yasuhiro; Abe, Mitsuhiro

doi:10.1109/jssc.2022.3193326

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…With the arrival of big data era, NAND Flash memory with large capacity, high bandwidth and high reliability is widely used, and the data transmission rate between NAND Flash memory and controller is also increasing [1,2,3,4,5,6,7,8,9,10,11,12]. Data transmission between NAND Flash memory and controller is realized by utilizing Non-Volatile double data rate (NV-DDR) interface which requires sampling data at the positive and negative edge of interface clock [1,2,3,4,5,6,7]. So the NV-DDR interface requires the interface clock with a 50% duty cycle.…”

Section: Introductionmentioning

confidence: 99%

“…The duty cycle of interface clock may be seriously distorted due to mismatches between pull-up and pull-down clock driver in the transmission path, lead to the bit error rate increase at high frequency. Therefore, NAND Flash memory needs a duty cycle corrector (DCC) to shape duty cycle of clock to 50% [1,2,3,4,5,6,7,8] , and DCC circuits with smaller correction accuracy have the more obvious advantage.…”

Section: Introductionmentioning

confidence: 99%

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A wide-frequency all-digital duty cycle corrector with self-adaptive configurable delay chain

Hai,

Liu,

Wang

2024

IEICE Electron. Express

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A wide-frequency all-digital duty cycle corrector with selfadaptive configurable delay chain is proposed. The proposed circuit can detect the alterations of clock frequency and the variations of PVT, and utilizes self-adaptive feedback loop to ensure that the circuit can achieve duty cycle correction within a wide operating frequency range. The test chip is fabricated in 130nm CMOS process, the area occupies 0.016mm 2 . The chip testing results indicate that the correction error is within 2% throughout the input duty cycle from 20% to 80% at the frequency from 260MHz to 1GHz.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A wide-frequency all-digital duty cycle corrector with self-adaptive configurable delay chain

Hai,

Liu,

Wang

2024

IEICE Electron. Express

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Two‐Dimensional Semiconductors: From Device Processing to Circuit Integration

Sheng,

Dong,

Zhu

et al. 2023

Adv Funct Materials

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The atomically thin nature and exceptional electrical properties of 2D materials (2DMs) have garnered significant interest in circuit applications. Researchers have developed circuits based on wafer‐level 2DM fabrication and monolithic integration in the laboratory. Numerous studies have been conducted on discrete device processes; however, circuit manufacturing is a multifaceted and methodical engineering process that demands seamless integration of multiple procedures. Notably, the optimization of crucial processes holds paramount significance in achieving expected results. This review presents the existing research on process integration of 2DM devices and circuit applications. The selection of suitable 2DMs for circuit applications is outlined, considering their excellent theoretical properties and feasible high‐quality growth processes. Drawing on highly mature semiconductor manufacturing process, while incorporating customized key processes, 2DM devices have the potential to strongly compete with, and even outperform, the conventional devices. Finally, the recent circuit applications of 2DMs are also discussed in detail. 2DM integrated circuits (2DM ICs) are now being practically applied in advanced manufacturing, transitioning from laboratory development to fabrication plant deployment. The implementation of underlying 2DM IC fabrication provides effective and unique solutions for More Moore, More than Moore, and Beyond CMOS technology routes.

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