A 10-GHz bias modulated class-E power amplifier in 90-nm CMOS

Chen, Shengting; Lee, Yi-Chun; Liu, Jenny Yi-Chun

doi:10.1109/rfit.2016.7578120

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…There is no doubt that the class-E amplifier developed initially by Ewing in 1964 1 and promoted by the Sokals, 2 still plays a significant role within the high-efficiency radio frequency and microwave amplifier scenario. Recent publications show that the class-E amplifier concept is interesting in the areas of wireless power transfer for biomedical implants, 3 in IoT applications for short-range communications where reduced battery consumption is important 4,5 and more recently in outphasing transmitters using the synergy of CMOS and GaN technologies. 6 In spite of the advantages offered by this amplification concept, appropriate selection of the transistor is relevant to guarantee best performance in terms of efficiency.…”

Section: Introductionmentioning

confidence: 99%

Computer‐aided design methodology for inductive compensated microwave class‐E power amplifier

Cumana

Vrba

2021

Int J RF Mic Comp-Aid Eng

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This article presents a simulation-based analysis to first evaluate the impact of excessive transistor output capacitance on class-E power amplifiers and to second show how inductive compensation can be used to recover optimum class-E operating conditions. As a starting point, the finite-feed inductor in a parallel-circuit topology is replaced by a frequency-dependent inductor, which in turn can be substituted by a network composed of a series inductor and additional subharmonic resonators. This complex lumped-element network is then replaced by a generalized transmission line equivalent topology, suitable for microwaves. Calculation of the transmission line impedances and electrical lengths of the proposed generalized network is shown in detail and a design procedure for this modified class-E is provided. The analysis presented here is further extended by using a simplified large-signal model for the employed GaN HEMT device, which allows evaluating the effects of non-ideal switching as well as of capacitance voltage-dependency and feedback capacitance. The analysis is validated by simulation and design of a test board. Measurements of the test board showed a drain efficiency of 80.3%, power-added efficiency of 76.3% and output power of 40.1 dBm at 1.96 GHz, demonstrating the validity of the proposed approach.

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