ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC) 2022
DOI: 10.1109/esscirc55480.2022.9911290
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A 111-149-GHz, Compact Power-combined Amplifier With 17.5-dBm $P_{sat}$, 16.5% PAE in 22-nm CMOS FD-SOI

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Cited by 8 publications
(2 citation statements)
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“…This shows that our design has the second best FOM, although the performance presented in [23] is only based on simulated results. Similarly, the proposed power amplifier has a relatively high power-added efficiency given the frequency range [16,[25][26][27][28][29]. Its drain efficiency is 46%.…”
Section: Measurement Resultsmentioning
confidence: 92%
See 1 more Smart Citation
“…This shows that our design has the second best FOM, although the performance presented in [23] is only based on simulated results. Similarly, the proposed power amplifier has a relatively high power-added efficiency given the frequency range [16,[25][26][27][28][29]. Its drain efficiency is 46%.…”
Section: Measurement Resultsmentioning
confidence: 92%
“…Similarly, the proposed power amplifier has a relatively high power-added efficiency given the frequency range [ 16 , 25 , 26 , 27 , 28 , 29 ]. Its drain efficiency is 46%.…”
Section: Measurement Resultsmentioning
confidence: 99%