A 128-Stage CMOS TDI Image Sensor With On-Chip Digital Accumulator

Nie, Kaiming; Xu, Jiangtao; Gao, Zhiyuan

doi:10.1109/jsen.2015.2499743

Cited by 21 publications

(13 citation statements)

References 14 publications

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“…Additionally, due to the incompatibility with the CMOS process, the CCD could not integrate with other functions on the same chip with the sensor [4]. In recent years, TDI image sensors implemented with the CMOS process have been reported [5,6,7,8,9,10,11,12,13,14]. Compared with the CCD, CMOS TDI image sensors could successfully integrate various analog and digital circuits as an on-chip camera [4].…”

Section: Introductionmentioning

confidence: 99%

“…There are typically three kinds of accumulation methods: charge-domain accumulation scheme [5,6,7,8], analog-domain accumulation scheme [9,10,11] and digital domain accumulation scheme [12,13,14] for CMOS TDI image sensors. In the charge-domain accumulation scheme, the noiseless accumulation enables good SNR.…”

Section: Introductionmentioning

confidence: 99%

“…Since the analog memory cell of the analog accumulator is implemented with capacitors, the accumulator area is considerably large [9,10]. In the digital domain accumulation scheme, the outputs of pixels are firstly quantized by column ADC, and then the corresponding digital results are added together by the digital accumulator [14]. The memory cell of the digital accumulator is implemented by digital registers, so the digital accumulator area is less than an analog accumulator with the same accumulation stages [14].…”

Section: Introductionmentioning

confidence: 99%

“…In the digital domain accumulation scheme, the outputs of pixels are firstly quantized by column ADC, and then the corresponding digital results are added together by the digital accumulator [14]. The memory cell of the digital accumulator is implemented by digital registers, so the digital accumulator area is less than an analog accumulator with the same accumulation stages [14]. In order to make the most use of the quantization range of ADC, the output signals of pixels are usually amplified several times before being sent to the ADC, which results in better SNR than that of analog-domain accumulation [13,14].…”

Section: Introductionmentioning

confidence: 99%

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A Low Power Digital Accumulation Technique for Digital-Domain CMOS TDI Image Sensor

Nie

et al. 2016

Sensors

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In this paper, an accumulation technique suitable for digital domain CMOS time delay integration (TDI) image sensors is proposed to reduce power consumption without degrading the rate of imaging. In terms of the slight variations of quantization codes among different pixel exposures towards the same object, the pixel array is divided into two groups: one is for coarse quantization of high bits only, and the other one is for fine quantization of low bits. Then, the complete quantization codes are composed of both results from the coarse-and-fine quantization. The equivalent operation comparably reduces the total required bit numbers of the quantization. In the 0.18 µm CMOS process, two versions of 16-stage digital domain CMOS TDI image sensor chains based on a 10-bit successive approximate register (SAR) analog-to-digital converter (ADC), with and without the proposed technique, are designed. The simulation results show that the average power consumption of slices of the two versions are 6.47×10-8 J/line and 7.4×10-8 J/line, respectively. Meanwhile, the linearity of the two versions are 99.74% and 99.99%, respectively.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Low Power Digital Accumulation Technique for Digital-Domain CMOS TDI Image Sensor

Nie

et al. 2016

Sensors

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“…The emergence of CMOS image sensor technology is one of the most important developments in solid-state imaging since the invention of the charge coupled device (CCD) [1][2][3][4][5][6]. The attraction is mostly due to the nature of CMOS technology in that many millions of transistors can be integrated on a single silicon circuit.…”

Section: Introductionmentioning

confidence: 99%

Design of a Low Noise Active Pixel Sensor using Complementary Metal-Oxide-Semiconductor Technology

Maity¹,

Maity²,

Baishya³

2016

stj

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Abstract-In this paper, our focus is on designing of complementary metal-oxide-semiconductor (CMOS) photodiode based active pixel sensor (APS) and performance analysis and achievements for CMOS image sensor. Different important design parameters like photocurrent, conversion gain, conversion factor, dynamic range, readout speed, and quantum efficiency have been calculated. Noise is also considered for the design at different phase of operations of CMOS APS. Various design parameters of our design are computed and compared with simulated results. Noise calculation shows that the pixel noise is dominated by reset noise.

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