A 160 GHz Frequency Quadrupler based on Heterogeneous Integration of GaAs Schottky Diodes onto Silicon using SU-8 for Epitaxy Transfer

Nadri, Souheil; Xie, Ling; Jafari, Masoud; Alijabbari, Naser; Cyberey, Michael E.; Barker, N. Scott; Lichtenberger, Arthur W.; Weikle, Robert M.

doi:10.1109/mwsym.2018.8439536

Cited by 13 publications

(2 citation statements)

References 7 publications

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“…generating harmonic components with order greater than 2 or 3, and with the exception of some recently developed single-stage quadrupler designs [15], [16], the frequency multipliers and the local oscillator chain of subharmonic mixers are usually composed of several low-order multiplying stages [20], [22], [23], generally requiring the use of inter-stage components, such as power amplifiers and isolators. Although this technology represent the state-ofart, the high economic cost derived from the complexity of the required topologies and the involved manufacturing processes, specially when working at frequencies near the THz band, limits the practical development of commercial applications.…”

Section: Because Of the Low Efficiency Of Schottky Diodes Whenmentioning

confidence: 99%

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

et al. 2019

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In this work, a graphene-based single-stage high-order subharmonic mixer is presented. The device is able to up-and downconvert a signal in the 330-500 GHz frequency range, using a local oscillator signal with frequency located in the 26-40 GHz band. It exploits the strong nonlinear electromagnetic behavior exhibited by macroscopic graphene sheets when they are exposed to an incident electromagnetic wave to generate the output signal as a mixing product between the input signal and a high-order harmonic component of the local oscillator, which is internally generated without requiring additional circuitry. A prototype was implemented and its performance was experimentally characterized considering several different local oscillator multiplication orders. The maximum measured downconversion gain is around −50 dB, whereas the maximum output signal reached when working as upconverter is −43 dBm at 340 GHz and −63 dBm at 480 GHz. These values are good enough to be used in practical short-range applications. Furthermore, the measurement results are in good agreement with the theoretical predictions about graphene behavior.

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Section: Because Of the Low Efficiency Of Schottky Diodes Whenmentioning

confidence: 99%

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

et al. 2019

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“…Due to the recent advancements in science and technology [1][2][3][4][5][6][7][8][9], graphene nanoplatelet (GPL) reinforcement has attracted considerable attention. Some applications of GPL reinforcement are reported in Ref.…”

Section: Introductionmentioning

confidence: 99%

Critical Temperature and Frequency Characteristics of GPLs-Reinforced Composite Doubly Curved Panel

et al. 2020

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In this study, critical temperature and frequency characteristics of a doubly curved panel are reinforced by graphene nanoplatelets (GPLs) with the aid of a two-dimensional generalized differential quadrature method (2D-GDQM) are investigated. The size effects are included using nonlocal strain gradient theory (NSGT) that has two length scale parameters, and the panel is modeled as a panel using high order shear deformation theory (HSDT). The mechanical properties of GPLs are calculated based on the rule of mixtures and the modified Halpin–Tsai model. The novelty of the current study is in considering the effects of the thermal environment, various boundary conditions, and size effects on the frequency and critical temperature of the GPLRC panel. The validation is performed through the comparison of the numerical results for the frequency of the GPLRC panel and the literature. For more verification, a finite element model is presented using the finite element package to simulate the response of the current structure. The results created from a finite element simulation illustrate a close agreement with the numerical method results. The results demonstrate that GPLs’ weight function, the ratio of panel curvature (R1/R2), GPLs’ pattern, and size-dependent parameters have noticeable effects on the frequency and critical temperature characteristics of the GPLs-reinforced composite (GPLRC) curved panel. The favorable suggestion of this survey is that when designing the GPLRC structure, special attention should be paid to size-dependent parameters because the nonlocal and length scale parameters have an essential role in the static and dynamic behaviors of the GPLRC panel.

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Removal of Interlayer Water of two Ti₃C₂T_x MXenes as a Versatile Tool for Controlling the Fermi‐Level Pinning‐Free Schottky Diodes with Nb:SrTiO₃

Makaryan

Okada

Kondo

et al. 2022

Adv Funct Materials

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Striving for the sixth-generation communication technology discovery, semiconductors beyond Si with wider bandgaps as well as non-conventional metals are actively being sought to achieve high speeds whilst maintaining devices miniaturization. 2D materials may provide the potential for downsizing, but their functional advantage over existing counterparts still longs to be discovered. Along that path, surface-adsorbed or bulk-intercalated water molecules remaining after wet-chemical synthesis of 2D materials are generally seen as obstacles to high-performance achievement. Herein, the control of such water within the interlayers of solution-processed metallic 2D titanium carbide (MXene) by vacuum annealing duration is demonstrated. Moreover, the impact of water removal on work function (WF) and functional terminations is unveiled for the first time. Furthermore, the usefulness of such water for controlling a novel Schottky diode in contact with an n-type oxide semiconductor, niobium-doped strontium titanate (Nb:SrTiO 3 ) is observed. The advantage of MXene compared to conventional gold as facile processing, WF tunability, and lower turn-on voltage in the Schottky anode application is highlighted. This fundamental study shows the way for a novel Schottky diode preparation in atmospheric conditions and provides implications for further research directions aiming at commercialization.

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A 160 GHz Frequency Quadrupler based on Heterogeneous Integration of GaAs Schottky Diodes onto Silicon using SU-8 for Epitaxy Transfer

Cited by 13 publications

References 7 publications

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

Critical Temperature and Frequency Characteristics of GPLs-Reinforced Composite Doubly Curved Panel

Removal of Interlayer Water of two Ti₃C₂T_x MXenes as a Versatile Tool for Controlling the Fermi‐Level Pinning‐Free Schottky Diodes with Nb:SrTiO₃

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A 160 GHz Frequency Quadrupler based on Heterogeneous Integration of GaAs Schottky Diodes onto Silicon using SU-8 for Epitaxy Transfer

Cited by 13 publications

References 7 publications

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

Critical Temperature and Frequency Characteristics of GPLs-Reinforced Composite Doubly Curved Panel

Removal of Interlayer Water of two Ti3C2Tx MXenes as a Versatile Tool for Controlling the Fermi‐Level Pinning‐Free Schottky Diodes with Nb:SrTiO3

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Removal of Interlayer Water of two Ti₃C₂T_x MXenes as a Versatile Tool for Controlling the Fermi‐Level Pinning‐Free Schottky Diodes with Nb:SrTiO₃