A 2.45 GHz Signal Detector Based on Zero Biasing Field Effect Transistor

Shafah, Esam Abdusalam; Moulay, Ahmed; Djerafi, Tarek

doi:10.23919/eumc.2019.8910859

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…Unlike other UWB or broadband RF power detectors [ 7 , 8 , 10 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ], the UWB Fe-Co-B planar antenna is an integral part of the proposed sensor. Such integration reduces the form factor, eliminates any need for post integration using external components, and enables one to batch fabricate the device at a low cost.…”

Section: Discussionmentioning

confidence: 99%

“…The technique is efficient; however, the requirements for external discrete components and cavities are a major drawback for on-chip integration. A zero-bias JFET-based RF power detection method in the 2.45 GHz has been presented in [ 13 ]. In [ 14 ], a MOSFET-based power detector for a UWB transmitter has been reported where the square law characteristic of the drain current of a MOSFET in the strong inversion region was used for RMS power detection.…”

Section: Introductionmentioning

confidence: 99%

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A MEMS Ultra-Wideband (UWB) Power Sensor with a Fe-Co-B Core Planar Inductor and a Vibrating Diaphragm Capacitor

Vejella

Chowdhury

2021

Sensors

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The design of a microelectromechanical systems (MEMS) ultra-wideband (UWB) RMS power sensor is presented. The sensor incorporates a microfabricated Fe-Co-B core planar inductor and a microfabricated vibrating diaphragm variable capacitor on adhesively bonded glass wafers in a footprint area of 970 × 970 µm2 to operate in the 3.1–10.6 GHz UWB frequency range. When exposed to a far-field UWB electromagnetic radiation, the planar inductor acts as a loop antenna to generate a frequency-independent voltage across the MEMS capacitor. The voltage generates a coulombic attraction force between the diaphragm and backplate that deforms the diaphragm to change the capacitance. The frequency-independent capacitance change is sensed using a transimpedance amplifier to generate an output voltage. The sensor exhibits a linear capacitance change induced voltage relation and a calculated sensitivity of 4.5 aF/0.8 µA/m. The sensor can be used as a standalone UWB power sensor or as a 2D array for microwave-based biomedical diagnostic imaging applications or for non-contact material characterization. The device can easily be tailored for power sensing in other application areas such as, 5G, WiFi, and Internet-of-Things (IoT). The foreseen fabrication technique can rely on standard readily available microfabrication techniques.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A MEMS Ultra-Wideband (UWB) Power Sensor with a Fe-Co-B Core Planar Inductor and a Vibrating Diaphragm Capacitor

Vejella

Chowdhury

2021

Sensors

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Microwave Detection Using Two-Atom-Thick Self-Switching Diodes Based on Quantum Simulations and Advanced Circuit Models

Aldrigo

Dragoman

Pelagalli

et al. 2022

IEEE Trans. Microwave Theory Techn.

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In this article, a two-atom-thick diode based on 2-D materials is presented for microwave detection. The diode consists of a molybdenum disulfide monolayer/graphene monolayer heterojunction transferred onto a silicon/silicon dioxide substrate and patterned by means of nanolithography techniques to obtain a geometrical self-switching diode. The interaction between the two monolayers gives rise to a double-stage device, which behaves as a back-to-back diode in the [−3, +3] V voltage range, and as a tunnel diode when exceeding +10 V. The heterojunction can be reproduced at the wafer scale, thanks to its CMOS compatibility and ease of fabrication, and it can be used efficiently as a microwave detector up to 10 GHz, with the best performance around the ISM 2.45-GHz band. Starting from advanced quantum simulations to predict the dc behavior of the single heterojunction-based channel, the diode was fabricated and fully characterized experimentally. Lastly, a rigorous equivalent circuit model is provided, which relies on the measured scattering parameters at high frequencies and allows treating the diode embedded into a coplanar waveguide line as a two-port lossy device. This way, the device can be exploited in circuit-based numerical tools for the design of complex microwave front ends.

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A 2.45 GHz Signal Detector Based on Zero Biasing Field Effect Transistor

Cited by 2 publications

References 7 publications

A MEMS Ultra-Wideband (UWB) Power Sensor with a Fe-Co-B Core Planar Inductor and a Vibrating Diaphragm Capacitor

A MEMS Ultra-Wideband (UWB) Power Sensor with a Fe-Co-B Core Planar Inductor and a Vibrating Diaphragm Capacitor

Microwave Detection Using Two-Atom-Thick Self-Switching Diodes Based on Quantum Simulations and Advanced Circuit Models

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