A 2.5 GHz low phase noise silicon germanium heterojunction bipolar transistor ring oscillator

Niekerk, Sarel Johannes Lodiwikus Jean van; Sinha, Saurabh

doi:10.1109/smicnd.2016.7783064

2016 International Semiconductor Conference (CAS) 2016

DOI: 10.1109/smicnd.2016.7783064

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A 2.5 GHz low phase noise silicon germanium heterojunction bipolar transistor ring oscillator

Sarel Johannes Lodiwikus Jean van Niekerk

Saurabh Sinha

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2022

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Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

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Graphene has been extensively investigated in the context of electronic components due to its attractive properties, such as high carrier mobility and saturation velocity. In the past decade, the graphene field-effect transistor (GFET) has been considered one of the potential devices to be used in future radio frequency (RF) applications and can help usher in the Internet of Things and the 5G communication network. This review presents recent developments of GFETs in RF applications with a focus on components such as amplifiers, frequency multipliers, phase shifters, mixers, and oscillators. Initially, the figures of merit (FoMs) for the GFET are briefly described to understand how they affect these RF components. Subsequently, the FoMs of GFET-based RF components are compared with other non-GFET-based RF components. It is found that, due to its zero-band gap and ambipolar characteristics, GFETs are more suitable for use in frequency multiplier and phase shifter applications, outperforming non-GFET-based RF components. Finally, future research on GFETs themselves as well as GFET-based RF components is recommended. This review provides valuable insights into such components that could give rise to innovative applications in industry.

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Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

View full text Add to dashboard Cite

show abstract

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A 2.5 GHz low phase noise silicon germanium heterojunction bipolar transistor ring oscillator

Cited by 1 publication

References 6 publications

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

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