A 261mV Bandgap reference based on Beta Multiplier with 64ppm/0C temp coefficient

Abstract

In this paper, a low voltage bandgap reference circuit has been proposed. The introduction of a modified beta multiplier bias circuit decreased the mismatch caused by the PMOS transistors opamp contribution. By shifting the fixed resistors to the NMOSs drain side, the beta multiplier bias minimised threshold mismatch between the two NMOS transistors. A 200-point MC simulation showed a 0.9 mV standard deviation, with a 0.34% accuracy. The simulated temperature coefficient was 64 ppm/ 0 C. The proposed circuit consumed 5.04 µW of power from a 0.45 V power supply voltage. A prototype was implemented in 65 nm CMOS technology occupying a 2888 µm 2 silicon area, with the nominal value of the reference at 261 mV.

Design of a High PSRR Low-pressure Bandgap Reference Source with Curvature Compensation

“…The analysis of common low-voltage bandgap reference is based on the first-order temperature characteristic curve of Vbe. The Vbe temperature curve of the triode is not a sloping line with a constant slope, but a curve of higher-order terms [5] . As a result, the low-voltage band-gap reference source made according to the first-order temperature curve is not ideal.…”

“…For some low-cost and low-power analog integrated circuits in the consumer electronics market, the automotive chip market and industrial chip market occupy a great proportion, such as medical equipment, intelligent wearable devices, and industrial equipment [1] . The bandgap reference source is an important part of the analog circuit.…”