A 28-GHz Passive Outphasing Load Modulator in 40-nm GaN

Hill, Cameron; Buckwalter, James F.

doi:10.1109/ims19712.2021.9574980

2021 IEEE MTT-S International Microwave Symposium (IMS) 2021

DOI: 10.1109/ims19712.2021.9574980

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A 28-GHz Passive Outphasing Load Modulator in 40-nm GaN

Cameron Hill

James F. Buckwalter

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Cited by 3 publications

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A 26-31 GHz Tapped-Ring Power Amplifier in 45-nm CMOS SOI with Greater than 35% Peak and Backoff Efficiency

Chang,

Buckwalter

2023

2023 Asia-Pacific Microwave Conference (APMC)

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A 28-GHz Passive Outphasing Load Modulator in 40-nm GaN

Cited by 3 publications

References 8 publications

A 26-31 GHz Tapped-Ring Power Amplifier in 45-nm CMOS SOI with Greater than 35% Peak and Backoff Efficiency

A 26-31 GHz Tapped-Ring Power Amplifier in 45-nm CMOS SOI with Greater than 35% Peak and Backoff Efficiency

Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications

Reconfigurable Millimeter-wave Power Amplifiers in GaN and SOI using Passive Load Modulation

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