A 2Gb/s-throughput CMOS transceiver chipset with in-package antenna for 60GHz short-range wireless communication

Mitomo,; Tsutsumi,; Hoshino, Yoshihiko; Hosoya,; Wang, Hong; Tsubouchi,; Tachibana,; Sai,; Kobayashi, Kazuya; Kurose,; Ban,; Tandai,; Tomizawa,

doi:10.1109/isscc.2012.6177010

Cited by 28 publications

(19 citation statements)

References 6 publications

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“…1(b) and explained in detail below. The switching biases are different than most transmit/receive switches [3,4,5,6,7,8,9,10,11]. In these conventional switches, the switching transistors are biased either at 0 or 1 V. For the proposed work, in TX mode, the PA transistor gate biases are set to 0.7 V considering gain and linearity of TX whereas the LNA gate biases are 0 V. For both LNA and PA transistors drain voltage is 1 V either for ON or OFF cases.…”

Section: Proposed Integrated Antenna Switchmentioning

confidence: 99%

“…60 GHz millimeter-wave (mm-wave) region gets more attention due to larger available bandwidths [1,2,3]. Transmit/receive switch for a mm-wave multiGb/s system is an advantageous block when considering phased array and multiinput multi-output (MIMO) communication for sharing antennas [3,4,5,6,7,8,9,10,11].…”

Section: Introductionmentioning

confidence: 99%

“…Transmit/receive switch for a mm-wave multiGb/s system is an advantageous block when considering phased array and multiinput multi-output (MIMO) communication for sharing antennas [3,4,5,6,7,8,9,10,11]. It is crucial to decrease the silicon area consumption of switch, while, also, care should be taken for noise figure (NF) of receiver (RX), and linearity of transmitter (TX).…”

Section: Introductionmentioning

confidence: 99%

“…It is crucial to decrease the silicon area consumption of switch, while, also, care should be taken for noise figure (NF) of receiver (RX), and linearity of transmitter (TX). Although there are other topologies for switch architecture [3,10,11], the common topology for antenna switch is based on quarter-wavelength (=4) [4,5,6,7,8]. The conventional switches has long =4 length (typically 600 to 700 µm in standard CMOS) transmission lines (TLs) which consumes relatively large area on-chip and introduce loss especially in mm-wave frequency region.…”

Section: Introductionmentioning

confidence: 99%

“…Considering advanced manufacturing nodes, this would result in increased cost for silicon. A small area switch is presented in [3] based on balun architecture consuming a total area of 0.024 mm 2 . Nevertheless, this topology has higher loss which affects the overall TX-to-RX communication performance.…”

Section: Introductionmentioning

confidence: 99%

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Design of low-loss 60 GHz integrated antenna switch in 65 nm CMOS

Tokgoz

Kawai

Okada

et al. 2018

IEICE Electron. Express

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A 60 GHz antenna switching architecture is presented for millimeter-wave transceivers. This circuit topology re-uses the last stage's transistor of power amplifier (PA) and the first stage's transistor of low-noise amplifier (LNA) as switches, and the matching blocks. A two-stage LNA and a two-stage PA are designed considering antenna switching operation in 65 nm CMOS. The method has lower loss than conventional switches in receiver mode. The most important advantage is no additional area penalty compared to conventional methods. 2.9 dB minimum noise figure (NF) in the receiver mode is measured, and 2 dBm of OP 1dB is measured in the transmitter mode.

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Section: Proposed Integrated Antenna Switchmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Design of low-loss 60 GHz integrated antenna switch in 65 nm CMOS

Tokgoz

Kawai

Okada

et al. 2018

IEICE Electron. Express

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Simple and robust self‐healing technique for millimetre‐wave amplifiers

Jia

Chi

Kuang

et al. 2016

IET Circuits, Devices & Systems

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A simple and robust self-healing technique for millimetre-wave (mm-wave) amplifiers is proposed. The selfhealing technique can correct the operation frequency shifting of the amplifier (including its input and output impedance matching shifting) due to process, voltage, and temperature variations and modelling inaccuracy. A mmwave amplifier with digitally controlled artificial dielectric transmission lines as fine frequency tuning components and an on-chip power detector as the frequency shifting detector has been implemented in 65 nm complementary metaloxide-semiconductor to verify the effectiveness of the technique. The operating frequency of five amplifier chips is calibrated by running the self-healing algorithm on a field-programmable gate array development board. On average, the gain of the amplifier is improved by 2.60 dB from 13.66 to 16.26 dB and the input matching is improved by 12.78 dB from −4.89 to −17.67 dB at 56 GHz after the proposed self-healing procedure.

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