1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers
DOI: 10.1109/isscc.1997.585457
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A 3.3 V 16 Mb nonvolatile virtual DRAM using a NAND flash memory technology

Tae‐Sung Jung
1
,
Do-Chan Choi2,
Sung-Hee Cho3
et al.
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