2005 International Conference on Simulation of Semiconductor Processes and Devices 2005
DOI: 10.1109/sispad.2005.201529
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A 3-dimensional particle device simulator; HyDeLEOSMC and its application to a FinFET

Y. Ohkura1,
Chikashi Suzuki2,
T. Enda3
et al.

Abstract: A 2 and 3 dimensional ensemble Monte Carlo device simulator is developed and applied to FinFET analysis by using 'realistic' number of electrons within the channel of actual device. The result of transient fluctuation of electron numbers, currents, and distributions of potential and electron are shown.

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