A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE

This paper presents a compact X‐band, 9 W AlGaAs/InGaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ω input and output impedance. Based on 0.35 μm gate‐length power PHEMT technology, a two‐stage power amplifier is fabricated on a 3‐mil thick wafer. While operating under 9 V DC bias condition, the characteristics of 17 dB small‐signal gain, an average of 9 W continuous‐wave output power, and 34% power added efficiency from 9.0 to 10.5 GHz can be achieved. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 257–261, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22102

show abstract

“…For ease of reference, the Crank-Nicholson scheme [3] is briefly derived here. The Maxwell equations in a lossless medium Ѩ Ѩt…”

Section: Cn-fdtd Updating Equationsmentioning

confidence: 99%

“…Previously, amplifiers with high power-added efficiency and high output power have been demonstrated [2][3][4][5]. However, the output power was not high enough for phase array radars.…”

Section: Introductionmentioning

confidence: 99%

A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

Chu

Huang

Liu

et al. 2006

Micro & Optical Tech Letters

View full text Add to dashboard Cite

show abstract

“…One of the most important components of the module is a high-power amplifier, which should preferably be developed as a microwave monolithic circuit (MMIC) for the minimization and reproducibility of the module [1][2][3][4]. The conventional amplifiers have their transistors arranged in a row using binary-tree-combining topology.…”

Section: Introductionmentioning

confidence: 99%

“…The high cross-polarization and beam-squinting restricts the use of offset reflectors where the frequency reuse is necessary for the effective utilization of the available bandwidth. Also, in case of remote sensing applications, the high cross-polarization reduces the beam efficiency, which may results into poor spatial resolution [3].…”

Section: Introductionmentioning

confidence: 99%

X‐band high‐power amplifier with a magnetically coupled power‐combiner

Lee

Park

Chun

et al. 2009

Micro & Optical Tech Letters

View full text Add to dashboard Cite

In this article, a high-power amplifier for X-band application is studied, which consists of a two-stage amplifier with magnetically coupled power-combiners and dividers. These are based on transmission line transformers, which has lower loss characteristics than spiral-type transformers at the frequencies. The proposed amplifier utilizes the voltage-combining concept with the transformers and differential amplifiers. The size of the amplifier is also minimized by using the virtual grounds of the differential structure. The saturated output power of the power amplifier is 38.1 dBm (6.45 W), and the gain is 17 dB at 10 GHz. The area of the chip is 2.56 mm Â 3.13 mm and the power density of the amplifier is 806 mW/mm 2 .ABSTRACT: This article presents the design and radiation characteristics of a dual-mode corrugated matched feed horn. This type of feed eliminates the unwanted high cross-polarization of an offset parabolic reflector antenna and improves the overall performance of the antenna sub-system. In a cylindrical corrugated structure, higher order HE 21 mode is added with the fundamental HE 11 mode to configure a dual-mode corrugated horn. For the proposed horn, the return-loss characteristics and the far-field radiation patterns were measured and the results are compared with the simulated results. The horn has been used as a primary feed device to illuminate a linearly polarized offset parabolic reflector antenna and the improvement in the crosspolarization has been estimated. Figure 1 Simulated secondary radiation pattern of an offset reflector illuminated by a conventional (HE 11 mode guided) corrugated horn. (For F/D ¼ 0.82, h 0 ¼ 34.8 )

show abstract

“…To n+ lnGaAs 13,000 A 5 x 1014 (Si) realize monolithic microwave integrated circuit (MMIC) n+sub-collector InGaAs [4][5].…”

Section: Introductionmentioning

confidence: 99%

2-38 GHz Broadband Compact InGaAs PIN Switches using a 3-D MMIC Technology

Yang

Eom

Choi

et al. 2007

2007 IEEE 19th International Conference on Indium Phosphide &Amp; Related Materials

View full text Add to dashboard Cite

Compact SPST switches using an InGaAs PIN diode have been developed for broadband MMIC applications. The cut-off frequency which is a figure of merit of the InGaAs PIN diode is obtained to be 5.1 THz. Three different circuit schematics were designed to compare the switch performances. For high-performance of the InGaAs PIN switches, the bias networks and DC blocking capacitors are monolithically integrated. The InGaAs PIN switches were successfully fabricated by using a developed benzocyclobutene(BCB)-based multi-layer MMIC technology. The multi-layer structure and meandered microstrip line configuration effectively reduce the chip area of the SPST series-shunt-shunt type PIN switch to 0.92 x 0.70 mm2. The good microwave performance and broadband characteristics have been achieved from the fabricated MMIC switches.

show abstract

A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE

Cited by 18 publications

References 10 publications

A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

X‐band high‐power amplifier with a magnetically coupled power‐combiner

2-38 GHz Broadband Compact InGaAs PIN Switches using a 3-D MMIC Technology

Contact Info

Product

Resources

About