Proceedings of 1994 IEEE GaAs IC Symposium
DOI: 10.1109/gaas.1994.636964
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A 40 GHz D-type flip-flop using AlGaAs/GaAs HBTs

Y. Kuriyama
1
,
Tohru Sugiyama
2
,
Sadato Hongo
3
et al.
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Cited by 22 publications
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References 8 publications
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80 Gbit/s optoelectronic delayed flip-flop circuitusing resonant tunnelling diodesand uni-travelling-carrier photodiode

Sano
1
,
Murata
2
,
Otsuji
3
et al. 1999
Electron. Lett.
11
2
5
0
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80 Gbit/s optoelectronic delayed flip-flop circuitusing resonant tunnelling diodesand uni-travelling-carrier photodiode

Sano
1
,
Murata
2
,
Otsuji
3
et al. 1999
Electron. Lett.
11
2
5
0
View full textAdd to dashboardCite

Heavily carbon-doped InGaP/GaAs HBT's with buried polycrystalline GaAs under the base electrode

Mochizuki
1
,
Ouchi2,
Hirata3
et al. 1998
IEEE Trans. Electron Devices
4
0
1
0
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A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-μm GaAs MESFETs

Otsuji
1
,
Yoneyama
2
,
Murata
3
et al. 1997
IEEE J. Solid-State Circuits
43
0
8
0
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