A 5.7 mW, UWB LNA for Wireless Applications Using Noise Canceling Technique in 90 nm CMOS

Abstract

A 3–12 GHz ultra-wideband (UWB) low noise amplifier (LNA) is proposed in this paper. The first stage common-gate (CG), common-source (CS) noise canceling approach is used to achieve low noise-figure (NF). CG configuration at the input stage provides wideband input-matching. The noise of CG transistor is cancelled by systematically added two parallel CS transistors, whose outputs are cascoded in second stage. In order to achieve flat power gain (S21) response, a series peaking inductor is used in the second stage. The proposed LNA is designed in 90 nm CMOS process with chip-layout area of 0.467 mm2 and in comparison to the existing LNAs, it consumes a low power of 5.7 mW from a 1 V supply. The achieved input-reflection coefficient (S11) is <−7.5 dB, output-reflection coefficient (S22) is <−7.6 dB with NF < 5.8 dB for 3–12 GHz UWB and third-order intercept point (IIP3) of −19 dBm. It achieves high and flat S21 of 20.84 ± 0.28 dB over 4.2–10 GHz, with NF ranging from 2.6–3.6 dB.