A 67.4–71.2-GHz nMOS-Only Complementary VCO With Buffer-Reused Feedback Technique

Wang, Yingte; Xu, Jiangtao; Kai-Yuan, He; Wu, Minshun; Zhang, Ruizhi

doi:10.1109/lmwc.2019.2949937

Cited by 8 publications

(1 citation statement)

References 8 publications

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“…A phase-locked loop (PLL) is an important building block in communication systems such as Wireless Local Area Network (WLAN) [1,2,3,4,5]. Voltage-Control Oscillator (VCO) is a critical module of PLL, and its performance directly influences the performance of PLL [6,7,8,9]. The VCO gain, K VCO , is a key parameter that affects the loop bandwidth, stability, and phase noise [10,11,12].…”

Section: Introductionmentioning

confidence: 99%

A 5.67-8.75GHz LC VCO with small gain variation for 2.4GHz-band WLAN applications

Tian

Huang

et al. 2021

IEICE Electron. Express

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In this paper, a 5.67-8.75 GHz LC VCO with small gain variation and reconfigurable buffer for 2.4 GHz-band WLAN applications is presented and implemented in a Semiconductor Manufacturing International Corporation (SMIC) 55 nm CMOS process. The VCO gain is a strong function of the capacitance. For wide frequency tuning range meaning the large gain variation. The gain calibration scheme is proposed to obtain small gain variation across the frequency range. This letter proposes a reconfigurable buffer with adjustable amplitude, low jitter, and small supply coupling issues. The results show the proposed gain calibration scheme is very effective. The measured phase noise at 6.69 MHz offset is -123.2 dBc/Hz at 4.9 GHz output frequency.

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Section: Introductionmentioning

confidence: 99%

A 5.67-8.75GHz LC VCO with small gain variation for 2.4GHz-band WLAN applications

Tian

Huang

et al. 2021

IEICE Electron. Express

View full text Add to dashboard Cite

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Low phase noise buffer‐reused BiCMOS oscillator

Lee

Jang

Chen

2021

Micro & Optical Tech Letters

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This letter presents a lower phase noise voltage-controlled oscillator (VCO) uses two differential amplifiers in crosscoupled feedback and is named as a buffer-reused VCO in the TSMC standard 0.18 μm SiGe BiCMOS processes. The die area is 1.1 × 1.2 mm 2 . The first amplifier uses HBT stacking on nMOSFET and the second amplifier uses nMOS amplifier. Its power consumption of 2.65 mW with output buffer current, the phase noise is −128.81 dBc/Hz at 1 MHz offset frequency from the center frequency 4.19 GHz. The figure of merit (FOM) is −194.08 dBc/Hz.

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58 GHz CMOS VCO with 16% efficiency

2020

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This Letter presents a millimetre‐wave CMOS oscillator, which achieves 4.9 dBm output power with 16% peak power efficiency. A phase noise of −98 thinmathspacedBc/Hz at 1 MHz offset frequency and 26.7% tuning range around 57.5 GHz centre frequency were verified experimentally. To the best knowledge of the authors, the output power, efficiency, and phase noise performance are the best among fundamental CMOS oscillators in the frequency range of interest, while the tuning range is the third highest result reported to date. The circuit occupies a silicon area of ∼9000 thinmathspaceμnormalm2 without the matching inductors on a 22 nm fully depleted silicon on insulator (FD‐SOI) CMOS technology.

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A 67.4–71.2-GHz nMOS-Only Complementary VCO With Buffer-Reused Feedback Technique

Cited by 8 publications

References 8 publications

A 5.67-8.75GHz LC VCO with small gain variation for 2.4GHz-band WLAN applications

A 5.67-8.75GHz LC VCO with small gain variation for 2.4GHz-band WLAN applications

Low phase noise buffer‐reused BiCMOS oscillator

58 GHz CMOS VCO with 16% efficiency

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