Abstract:This paper describes a high speed current mode multi-level simultaneous bi-directional I/O. To increase data rate, impedance matching, reference calibration, latched differential current switching and clocked comparators are used. Simulation results based on 0.18µm CMOS process show that the proposed design achieves data rate up to 8-Gb/s/pin at the power consumption of 46.8mW with 1.8V power supply.
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