A 90–100-GHz Phased-Array Transmit/Receive Silicon RFIC Module With Built-In Self-Test

Inac, Ozgur; Golcuk, Fatih; Kanar, Tumay; Rebeiz, Gabriel M.

doi:10.1109/tmtt.2013.2280191

Cited by 55 publications

(33 citation statements)

References 9 publications

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“…The W Band, between 75 GHz and 110 GHz, is an emerging application space on several fronts including radar [1,2], imaging [3], and high speed communications [4]. A critical receiver component found in systems developed for such applications is a down-conversion mixer whose function is to accurately translate signals to lower frequencies for processing.…”

Section: Introductionmentioning

confidence: 99%

“…In order to combat these effects, well-balanced mixers utilizing bipolar devices are often utilized. In addition, with highly-scaled technologies operating at W Band frequencies, process variations can degrade performance necessitating some form of integrated assessment and tuning capability [2]. Taking these factors into consideration, BiCMOS technologies become very attractive for W Band applications requiring down-conversion.…”

Section: Introductionmentioning

confidence: 99%

“…Until recently, research has been focused on the demonstration of CMOS and SiGe BiCMOS technologies [1][2][3][4][5][6]. In order to move beyond the performance of siliconbased technologies, while still providing high levels of integration and control, heterogeneous integration of III-V semiconductors and CMOS has been proposed and demonstrated for mixed-signal circuits [6], and more recently for W Band LNAs [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz

McCue¹,

Casto²,

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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In this paper, a double-balanced Gilbert cell down-conversion mixer is demonstrated from 70-110 GHz. The wide bandwidth and high frequency are enabled by the HRL InP/Si BiCMOS process. With an f T of 300 GHz, the available 0.25 µm InP HBTs are used in the signal path while the 90nm CMOS devices are used for biasing and gain adjustment. The fully differential circuit is implemented using two on-chip Marchand baluns feeding both the LO and RF ports. An IF buffer follows the mixer to improve matching and signal quality for testing. After de-embedding the balun and IF buffer, the mixer core achieves a peak conversion gain of 13 dB, a minimum DSB NF of 10 dB, and an OP1dB of -2 dBm while consuming 5 mA from a 3.3 V supply.Index Terms -W-Band circuits, mm-wave mixer, doublebalanced mixer, Marchand balun, heterogeneous integration.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz

McCue¹,

Casto²,

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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“…This paper will present some of these ICs for mm-wave radar and communication systems [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…90-100 GHZ 4X4 POLARIMETRIC RADAR CHIP Fig. 6 presents a 4x4 transmit/receive (T/R) SiGe BiCMOS phased-array (IBM8HP) chip at 90-100 GHz with vertical and horizontal polarization capabilities, 3-bit gain control (9 dB), and 4-bit phase control [6,7]. The 4x4 phased array fits into a 1.6x1.5mm 2 grid, which is required at 94 GHz for wide scan-angle designs.…”

Section: Introductionmentioning

confidence: 99%

Millimeter-wave SiGe RFICs for large-scale phased-arrays

Rebeiz

2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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This talk will present our latest work on silicon RFICs for phased-array applications with emphasis on very large chips with built-in-self-test capabilities, and for wafer-scale integration. SiGe is shown to be ideal for mmwave applications due to its high temperature performance (automotive radars, base-stations, defense systems, etc.) and lower power consumption. These chips drastically reduce the cost of microwave and millimeter-wave phased arrays by combining many elements on the same chip, together with digital control. The phased-array chips also allow a much easier packaging scheme using either a multi-layer PCB or wafer-level packages. Examples from 30 GHz to 140 GHz will be presented, together with their system-level performance (imaging radars, packaging, antenna patterns, etc.)

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A Survey of Phase Shifters for Microwave Phased Array Systems

Kebe,

Yagoub,

Amaya

2024

Circuit Theory & Apps

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Phased Array Systems (PASs) are extensively used in radar and telecommunication systems for diverse applications, including military surveillance and wireless broadband communication. Besides, they are becoming increasingly indispensable in modern applications such as multi‐function phased array radars for weather monitoring and aircraft tracking or high‐throughput satellite systems, which aim to provide fast broadband connectivity in remote areas. Despite the numerous advantages of phased array systems with RF phase shift, including high signal‐to‐noise and signal‐to‐interference ratios, as well as low complexity, they present a few limitations, including high cost and large chip areas. The cost and size of PASs are mainly dependent on the RF phase shifters, which are essential to their operation. This article describes the different types of phase shifters (mechanical, ferromagnetic/magnetic, electromechanical, and electronic). It compares their performance metrics, highlighting that electronic phase shifters are the most common type used in modern PASs. In this regard, a comparative study of different subcategories of electronic phase shifters, such as the switched‐type, reflective‐type, loaded‐transmission line, and vector‐sum phase shifters, are explored along with their advantages, drawbacks and state‐of‐art techniques used to address their limitations. Therefore, this article may serve as a reference for research milestones on RF phase shifters.

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A 90–100-GHz Phased-Array Transmit/Receive Silicon RFIC Module With Built-In Self-Test

Cited by 55 publications

References 9 publications

An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz

An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz

Millimeter-wave SiGe RFICs for large-scale phased-arrays

A Survey of Phase Shifters for Microwave Phased Array Systems

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