A behavioral transient model of IGBT for switching cell power loss estimation in electromagnetic transient simulation

Xu, Yanming; Ho, Carl Ngai Man; Ghosh, Avishek; Muthumuni, Dharshana

doi:10.1109/apec.2018.8341021

Cited by 7 publications

(2 citation statements)

References 23 publications

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“…Unfortunately, models of IGBTs built-in in popular simulation programmes are characterised by low accuracy [19,28]. In turn, as is shown in the cited papers the literature models often do not take into account the influence of such essential physical phenomena such as, e.g., self-heating or the sub-threshold effect [11,[28][29][30][31][32][33][34][35][36][37], which can influence the shape of both dc and dynamic characteristics of an IGBT in an essential manner [19].…”

Section: Introductionmentioning

confidence: 99%

Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

Górecki

Zarębski

2021

Energies

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This paper proposes a new compact electrothermal model of the Insulated Gate Bipolar Transistors (IGBT) dedicated for SPICE (Simulation Program with Integrated Circuit Emphasis). This model makes it possible to compute the non-isothermal DC characteristics of the considered transistor and the waveforms of terminal voltages and currents of the investigated device and its internal temperature at transients. This model takes into account the nonlinearity of thermal phenomena in this device. The form of the formulated model is described and the problem of estimating its parameter values is discussed. The correctness of the proposed model was verified experimentally both at DC operation and at transients. The obtained results are compared to the results of computations performed with the use of the classical literature model. A very good agreement between the results of measurements and computations performed with the new model is obtained at different cooling conditions and in a wide range of changes of parameters characterising the electrical excitation of the tested device.

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Section: Introductionmentioning

confidence: 99%

Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

Górecki

Zarębski

2021

Energies

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“…Zou et al introduced a functional model of transient loss, analyzed the switching process in detail, and established a mathematic expressions of power loss considering stray inductance [20]. Xu et al proposed an improved behavioral transient model of IGBT with anti-parallel freewheeling diode, and further proposed a power loss estimation approach for switching cell [21].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Frequency and Temperature Dependence of Power Losses Difference in Parallel IGBTs

Yang

Che

et al. 2020

IEEE Access

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With the development of high power converters, safe operation of IGBT modules with parallel chips is of increasing importance. IGBT can work normally in safe range in the initial operation even if current imbalance is happening. However, if the uneven current state lasts too long, it is difficult to keep a uniform junction temperature, which can further lead to uneven distribution of the power losses. In severe cases, the device and converter may be damaged due to overheating. This paper studies the stability of such an interactive process with mathematical modelling backed by experiment. Because of the opposite sensitivities of switching and conduction losses to temperature under high current injection, the concept of 'inflection point frequency characteristic' is introduced to evaluate the trend of junction temperature mismatches between the parallel IGBT chips. The inflection point frequency at different current and temperature levels is tested to verify the model prediction, and the applicability of this approach in multi-chip parallel module is discussed. By establishing the relationship between the switching frequency and the thermal stability limit of parallel IGBTs, it can provide a feasible reference for improving the reliability of multi-chip parallel power devices.INDEX TERMS Insulated gate bipolar transistor (IGBT), parallel connection, switching loss, conduction loss, power losses.

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A Datasheet-Based Behavioral Model of SiC MOSFET for Power Loss Prediction in Electromagnetic Transient Simulation

Ghosh

et al. 2019

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

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A behavioral transient model of IGBT for switching cell power loss estimation in electromagnetic transient simulation

Cited by 7 publications

References 23 publications

Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

Evaluation of Frequency and Temperature Dependence of Power Losses Difference in Parallel IGBTs

A Datasheet-Based Behavioral Model of SiC MOSFET for Power Loss Prediction in Electromagnetic Transient Simulation

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