A Better Sense Amplifier Improves the Resilience in Compute-In-Memory and Row Hammer

Abstract

As machine learning (ML) workloads continue to scale, the demand for higher-density DRAM (Dynamic Random-Access Memory) and SRAM (Static Random-Access Memory) is intensifying, and also driving interest in compute-in-memory (CIM) architectures as a promising approach to enhancing computational efficiency. However, increasing DRAM cell density introduces significant challenges, particularly in the reliable identification of charge sharing between cells and bit lines. This challenge heightens the susceptibility of DRAM to row hammer attacks, where unintended data corruption occurs due to repeated access to adjacent rows. Furthermore, CIM architectures necessitate more precise sensing of bit lines to ensure accurate computation within memory. In light of these challenges, our study proposes an investigation into the potential benefits of utilizing an offset compensation sense amplifier (OCSA). The OCSA is designed to address the accuracy limitations posed by high-density DRAM in CIM applications. By enhancing the precision of bit line sensing, the OCSA may mitigate the vulnerability to row hammer attacks and improve the overall reliability and performance of CIM architectures. This study will explore the effectiveness of the OCSA in maintaining data integrity and computational accuracy within high-density DRAM environments, offering insights into its applicability for future ML workloads.