A Built-In Self-Test Circuit Based on March FRDD Algorithm for FinFET Memory

Abstract

FinFET memory is widely used in various semiconductor products due to its good read/write margin, lower power consumption, and faster driving speed. However, the forked 3D physical structure and the increased density of storage are very susceptible to manufacturing defects, which may cause memory functional logic faults that are different from traditional planar CMOS memories. Therefore, it is critical to explore an effective test method for FinFET memories. This paper proposes a MBIST circuit for detecting functional faults of FinFET memory. The proposed circuit is based on the March FRDD algorithm and performs well in detecting resistance dynamic faults. The area of this circuit is 85.3286 µm2, which benefits from the design method of multiplexing the internal part of the circuit. The total fault coverage of the MBIST circuit reaches 91.7%, which provides great convenience for FinFET memory testing.