2012 IEEE 30th VLSI Test Symposium (VTS) 2012
DOI: 10.1109/vts.2012.6231072
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A Built-In Self-Test scheme for DDR memory output timing test and measurement

Abstract: This paper presents a Built-In Self-Test (BIST) scheme to measure high speed double data rate (DDR) memory output timing using low cost testers. This technique uses an onchip pattern generator to generate a time delay between data and data-strobe or clock. The time delay is controlled precisely using a phase interpolator based cycle-by-cycle control method. A novel method for testing the resolution of phase interpolator, which does not need any extra hardware, is also presented. Using the test resolution, a ti… Show more

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Cited by 5 publications
(3 citation statements)
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“…Unable to directly access the Module Under Test (MUT) inside the chip, ATE can only access the MUT via I/Os. This invites inaccuracy problems due to external test environment factors, such as impedance mismatch and heavy capacitive load [9].…”
Section: Introductionmentioning
confidence: 99%
“…Unable to directly access the Module Under Test (MUT) inside the chip, ATE can only access the MUT via I/Os. This invites inaccuracy problems due to external test environment factors, such as impedance mismatch and heavy capacitive load [9].…”
Section: Introductionmentioning
confidence: 99%
“…ATE systems and extensions [3] provide the ability of multi-channel and high-speed testing. Built-In Self-Test (BIST) [4,5] is another way to test memory. In this scheme, BIST uses low-speed signals from an ATE system and generates highspeed data for memory testing within the DUT.…”
Section: Introductionmentioning
confidence: 99%
“…Even though, many studies of high-speed interface testing methods have been conducted [4]- [6], these methods are developed only for testing binary signal. No real-time testing solution for the multilevel signals has been released at this time.…”
mentioning
confidence: 99%