A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode

To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to -5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.

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A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode

Cited by 2 publications

References 9 publications

Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix

Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

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