A CMOS Full-Wave Switching Rectifier with Frequency Up-Down Conversion for 5G NR Wirelessly-Powered Relay Transceivers

Kato, Sena; Yuasa, Keito; Ide, Michihiro; Shirane, Atsushi; Okada, Kei

doi:10.1109/esscirc55480.2022.9911328

Cited by 5 publications

(2 citation statements)

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“…The rectifier consists of a cross-coupled nMOS pair with a 1:2.5 balun, as depicted in Fig. 6 [25]. The gate width to gate length ratio of the nMOS is 36 um / 60 nm.…”

Section: Rectifiermentioning

confidence: 99%

“…However, conventional relay transceivers using WPT for beamforming relied on switching-type phase control or external phase shifters [24][25]. In these cases, beamforming could not be achieved until the phase shifter was controlled during the relay transceiver startup, highlighting the importance of relay stations that do not require beam control during startup.…”

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confidence: 99%

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Millimeter-Wave Transceiver Utilizing On-Chip Butler Matrix for Simultaneous 5G Relay Communication and Wireless Power Transfer

YUASA,

IDE,

KATO

et al. 2024

IEICE Trans. Electron.

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This paper introduces a wireless-powered relay transceiver designed to extend 5G millimeter-wave coverage. It employs an on-chip butler matrix, enabling beam control-free operation. The prototype includes PCB array antennas and on-chip butler matrix and rectifiers manufactured using a Si CMOS 65nm process. The relay transceiver performs effectively in beam angles from -45° to 45°. In the 24 GHz wireless power transmission (WPT) mode, it generates 0.12 mW with 0dBm total input power, boasting an RF-DC conversion efficiency of 12.2 %. It also demonstrates communication performance at 28 GHz in both RX and TX modes with a 100 MHz bandwidth and 64QAM modulation.

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“…The rectifier consists of a cross-coupled nMOS pair with a 1:2.5 balun, as depicted in Fig. 6 [25]. The gate width to gate length ratio of the nMOS is 36 um / 60 nm.…”

Section: Rectifiermentioning

confidence: 99%

mentioning

confidence: 99%