A CMOS image sensor with dual pixel reset voltage for high accuracy ultraviolet light absorption spectral imaging

Aoyagi, Yoshinobu; Fujihara, Yasuyuki; Murata, Maasa; Shike, Hiroya; Kuroda, Rihito; Sugawa, Shigetoshi

doi:10.7567/1347-4065/aaffc1

Cited by 11 publications

(10 citation statements)

References 27 publications

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“…Low-cost integrated solutions comprising sensors and low power communication enablement, such as RFID and Wi-Fi connectivity of the sensing nodes, are required for such systems. There are several solutions featuring UV sensors embedded into CMOS [ 7 , 8 , 9 ]; these technologies assume additional masks to the core CMOS process flow and typically have low responsivity in the UVC/UVB range.…”

Section: Introductionmentioning

confidence: 99%

Embedded UV Sensors in CMOS SOI Technology

Yampolsky

Pikhay

Roizin

2022

Sensors

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We report on ultraviolet (UV) sensors employing high voltage PIN lateral photodiode strings integrated into the production RF SOI (silicon on isolator) CMOS platform. The sensors were optimized for applications that require measurements of short wavelength ultraviolet (UVC) radiation under strong visible and near-infrared lights, such as UV used for sterilization purposes, e.g., COVID-19 disinfection. Responsivity above 0.1 A/W in the UVC range was achieved, and improved blindness to visible and infrared (IR) light demonstrated by implementing back-end dielectric layers transparent to the UV, in combination with differential sensing circuits with polysilicon UV filters. Degradation of the developed sensors under short wavelength UV was investigated and design and operation regimes allowing decreased degradation were discussed. Compared with other embedded solutions, the current design is implemented in a mass-production CMOS SOI technology, without additional masks, and has high sensitivity in UVC.

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Section: Introductionmentioning

confidence: 99%

Embedded UV Sensors in CMOS SOI Technology

Yampolsky

Pikhay

Roizin

2022

Sensors

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“…However, the drawbacks of this approach include high costs and difficulty in integration. Recently, the Si-based filterless UV detector was developed, wherein two photodiodes with different sensitivity to the UV light [6], [7] were used and realized as a discrete package. This implies that there is still considerable research required to realize the integration of UV sensors into LSI systems.…”

Section: Introductionmentioning

confidence: 99%

Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor

2022

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This study proposes a new ultraviolet-infrared (UV-Ir) compatible sensor fabricated using the standard CMOS process. The concept is verified through a numerical simulation, wherein the standard CMOS process parameters used are evaluated. The proposed sensor is an extension of a previously proposed RGB sensor designed on the standard CMOS process, and calculating the current ratio enables the detection of UV with high sensitivity. In addition, the use of current rectification eliminates the short to middle wavelength region and leaves only the Ir region which is used for detection. High dynamic ranges of 160 dB are ensured for all UV, Ir and RGB which they are excellent for color sensing. Consequently, combined with the previously proposed RGB sensing, the new RGB+UV+Ir sensor is realized without any filters.

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“…Current UV sensors developed to meet some of those requirements can be classified into four technological categories. The first category is of sensors that employ compound semiconductors with a wide bandgap, such as SiC, AlGaN and GaAsP [11,12,13]; the second category uses a Silicon-On-Insulator (SOI) structure containing a shallow surface detection layer with a thickness of a few tens of nanometers [7]; the third category employs silicon (Si) light detectors with a high concentration surface layer to form drift fields from near the Si surface for achieving high UV responsivity and high robustness to continuous UV light exposure [14,15,16,17]. The fourth category employs sensors with UV and visible responsivity that captures the background visible light in advance and subtracts it from the subsequent detected light [18].…”

Section: Introductionmentioning

confidence: 99%

A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method

Silva

Kuroda

Sugawa

2019

Sensors

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This paper presents a silicon ultraviolet radiation sensor with over 90% UV internal quantum efficiency (QE) and high selectivity to the UV waveband without using optical filters. The sensor was developed for applications that require UV measurement under strong background visible and near-infrared (NIR) lights, such as solar UV measurement, UV-C monitoring in greenhouses or automated factories, and so on. The developed sensor is composed of monolithically formed silicon photodiodes with different spectral sensitivities: a highly UV responsive photodiode with internal quantum efficiency (QE) of nearly 100% for UV light, and a lowly UV responsive photodiode with UV internal QE lower than 10%. The photodiodes were optimized to match their visible and NIR light responsivity, and the UV signal is extracted from the background radiation by using the differential spectral response method. With this approach, an internal QE of over 90% for UV light was obtained, with a residual internal QE to non-UV light lower than 20% for 400 nm, 5% for 500 nm, 2% for 600 nm and 0.6% to NIR light. The developed sensor showed no responsivity degradation after exposure towards strong UV light. It was confirmed by the simulation results that the residual responsivity is further suppressed by employing an on-chip band-rejection optical layer consisting of several layers of silicon oxide and silicon nitride films.

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A CMOS image sensor with dual pixel reset voltage for high accuracy ultraviolet light absorption spectral imaging

Cited by 11 publications

References 27 publications

Embedded UV Sensors in CMOS SOI Technology

Embedded UV Sensors in CMOS SOI Technology

Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor

A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method

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