A CMOS Two-Element 170-GHz Fundamental-Frequency Transmitter With Direct RF-8PSK Modulation

Nazari, Peyman; Jafarlou, Saman; Heydari, Payam

doi:10.1109/jssc.2019.2945263

Cited by 44 publications

(8 citation statements)

References 26 publications

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“…Silicon technologies, on the other hand, present much higher level of integration and may be considered as platform of choice for mass-marketing of ultra-high-speed transceivers. CMOS/BiCMOS transmitters/receivers operating in THz band have been demonstrated by prior work [12], [16], [18]- [21], [23]. However, increasing the carrier frequency is limited by the device f max .…”

Section: A Bandwidth Increase and Design Challengesmentioning

confidence: 99%

“…References [20], [21], [23] entertained the idea of highorder (de-)modulation directly in RF domain. Shown in Fig.…”

Section: B Low-power Direct-rf-(de)modulation Transceiversmentioning

confidence: 99%

“…14(a)) [21]. To avert wideband RF phase-shifters at THz frequencies (e.g., 170 GHz in [21]) and mitigate their significant insertion loss in the RF path, this additional phase-modulation is deployed in the LO path and placed prior to quadrature mixers, as shown in see Fig. 14(a).…”

Section: ) Case Studiesmentioning

confidence: 99%

“…Fig. 14(a) constitutes the core of a bits-to-RF transmitter presented in [21]. Here, to generate higher local oscillator power, we used two separate SPSs, although a single SPS can alternatively be employed prior to I/Q generation circuit.…”

Section: ) Case Studiesmentioning

confidence: 99%

See 3 more Smart Citations

Terahertz Integrated Circuits and Systems for High-Speed Wireless Communications: Challenges and Design Perspectives

Heydari

2021

IEEE Open J. Solid-State Circuits Soc.

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This paper presents challenges and design perspectives for terahertz (THz) integrated circuits and systems. THz means different things to different people. From International Telecommunication Union (ITU) perspective, THz radiation primarily means frequency range from 300 − 3000 GHz. However, recently, a more expansive definition of THz has emerged that covers frequencies from 100 GHz to 10 THz, which includes sub-THz (100 − 300 GHz), ITU-defined THz frequencies. This definition is now commonly used by communication theorists, and since this paper is intended for people with a wide variety of expertise in system and circuit design, we have adopted the latter definition. The paper brings to the open unmitigated shortcomings of conventional transceiver architectures for multi gigabit-per-second wireless applications, unfolds challenges in designing THz transceivers, and provides pathways to address these impediments. Furthermore, it goes through design challenges and candidate solutions for key circuit blocks of a transceiver including front-end amplifiers, local oscillator (LO) circuit and LO distribution network, and antennas intended for frequencies above 100 GHz.

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Section: A Bandwidth Increase and Design Challengesmentioning

confidence: 99%

“…References [20], [21], [23] entertained the idea of highorder (de-)modulation directly in RF domain. Shown in Fig.…”

Section: B Low-power Direct-rf-(de)modulation Transceiversmentioning

confidence: 99%

Section: ) Case Studiesmentioning

confidence: 99%

Section: ) Case Studiesmentioning

confidence: 99%

See 2 more Smart Citations

Terahertz Integrated Circuits and Systems for High-Speed Wireless Communications: Challenges and Design Perspectives

Heydari

2021

IEEE Open J. Solid-State Circuits Soc.

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“…One large drawback of the CMOS process is its low f max , which does not normally exceed 300 GHz. As a result, the CMOS amplification is not normally used for systems that operate at frequencies above 170 GHz [19]- [22]. Although several 300-GHz-band CMOS amplifiers have been demonstrated lately [23]- [26], their characteristics are still not reliable for wideband 300-GHz-band wireless TRXs, causing the dominance of the mixer-last (or multiplier-last) transmitter (TX), mixer-first receiver (RX) architecture in the recent works [27]- [35].…”

Section: Introductionmentioning

confidence: 99%

A Bi-Directional 300-GHz-Band Phased-Array Transceiver in 65-nm CMOS With Outphasing Transmitting Mode and LO Emission Cancellation

Abdo

Gomez

Wang

et al. 2022

IEEE J. Solid-State Circuits

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This article introduces a four-element 300-GHzband bi-directional phased-array transceiver (TRX). The TRX utilizes the same antenna, signal path, and local oscillator (LO) circuitry to operate either in transmitter (TX) mode or receiver (RX) mode. The TX mode adopts the outphasing technique to increase the average output power for higher order modulation schemes by utilizing the two mixers that are connected directly to the antenna in a mixer-last fashion. The two signal paths also enable the canceling of the LO feed-through (LOFT). The RX mode also benefits from the LOFT cancellation technique to suppress the LO emission, which is a common issue of the mixer-first RXs. The RX has a separate Hartley operation mode to reject the image signal coming from the TX. The TRX chip was implemented using CMOS 65-nm process, and a four-element phased array was implemented by stacking liquid crystal polymer (LCP) flexible printed circuit boards (PCBs). The stacked structure provides the required narrow antenna pitch at the 300-GHz band. The measured beam angle range is from Manuscript

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A 135 GHz Direct-Digital 16-QAM Wireless and DWG Link

D’heer,

Reynaert

2024

Analog Circuits and Signal Processing

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A CMOS Two-Element 170-GHz Fundamental-Frequency Transmitter With Direct RF-8PSK Modulation

Cited by 44 publications

References 26 publications

Terahertz Integrated Circuits and Systems for High-Speed Wireless Communications: Challenges and Design Perspectives

Terahertz Integrated Circuits and Systems for High-Speed Wireless Communications: Challenges and Design Perspectives

A Bi-Directional 300-GHz-Band Phased-Array Transceiver in 65-nm CMOS With Outphasing Transmitting Mode and LO Emission Cancellation

A 135 GHz Direct-Digital 16-QAM Wireless and DWG Link

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