A CNTFET-C first order all pass filter

CNTFET Based Fully Differential First Order All Pass Filter

“…where, a is graphene lattice constant and (m, n) are chirality vector indices [26]. In this work, the Stanford CNTFET model is used for the circuit verification [31].…”

“…In this work, the Stanford CNTFET model is used for the circuit verification [31]. This model accurately predicts the transient and AC performance with more than 90% of accuracy and take care of numerous non idealities like effect of drainsource extension region, charge-screening-effect, inter-CNT interconnect wiring capacitance, finite scattering mean free path, drain to source series resistance and many more [10,26]. The proposed FDFAPF topology is shown in Fig.…”

“…It is to be noted that FDFAPF circuits proposed in the technical literature [4,16,17,[19][20][21][22][23][24][25] utilize bulk semiconductor technology which faces several emerging issues due to continuous focus on device scaling in nano meter scale for further validation of Moore's law. These includes short channel effects, lithographic limitations, gate leakage, boron penetrations, high field effects, poly-silicon depletion and increased heat production etc [26,27]. There is an essential requirement to substitute the conventional bulk semiconductor technology with more reliable and robust circuit technology to work equally well at nanoscale.…”

“…Various devices architecture has been introduced recently, like CNTFET, FinFETs, double gate FET, strained Si FET etc [28]. Among these solutions, CNTFET is considered as a promising alternative for future extension of Moore's law due to its efficient electrostatic control, ballistic transport of charge carriers, large thermal conductivity, lesser parasitics, higher cutoff frequency, large drive current and low power dissipation to name a few [26][27][28]. Since introduction of CNTFET as an emerging device and better alternative of bulk semiconductor technology, limited work on CNTFET based circuit design has been carried out in analog filtering domain [10,18,26,27,29,30].…”

“…Among these solutions, CNTFET is considered as a promising alternative for future extension of Moore's law due to its efficient electrostatic control, ballistic transport of charge carriers, large thermal conductivity, lesser parasitics, higher cutoff frequency, large drive current and low power dissipation to name a few [26][27][28]. Since introduction of CNTFET as an emerging device and better alternative of bulk semiconductor technology, limited work on CNTFET based circuit design has been carried out in analog filtering domain [10,18,26,27,29,30]. This work aims to realize new APF topologies with compact circuit structures for low voltage, low power and high frequency fully differential applications.…”